LMN400B01-7 Diodes Zetex, LMN400B01-7 Datasheet - Page 4

• Manufacturer Part Number: LMN400B01-7
• Manufacturer: Diodes Zetex

Specifications of LMN400B01-7

• Lead Free Status / Rohs Status: Compliant

* Pulse Test: Pulse width, tp <300 S, Duty Cycle, d 0.02
N-MOSFET with Gate Pull-Down Resistor (Q2)
Notes:
DS30699 Rev. 5 - 2
Electrical Characteristics:
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
Gate Pull-Down Resistor, +/- 30%
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
4. Short duration test pulse used to minimize self-heating effect.
350
300
250
200
150
100
50
0
0
Characteristic
25
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3, Max Power Dissipation vs
50
Ambient Temperature
75
100
125
Typical Characteristics
V
Symbol
150
R
V
V
(BR)DSS
I
I
I
td
td
I
GSSR
C
GSSF
DS(on)
C
V
GS(th)
D(on)
DS(on)
g
C
I
DSS
R3
I
SM
FS
oss
(on)
(off)
rss
SD
iss
S
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175
4 of 10
Min
500
60
80
80
1
@ T
A
= 25 C unless otherwise specified
1.86
0.08
0.15
1.55
0.88
Typ
240
350
1.4
37
500
300
450
350
250
200
150
100
400
50
0
0
lb = 10mA
lb = 9mA
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-0.95
Max
0.95
3.75
115
800
2.2
1.5
1.5
50
25
20
40
1
3
2
5
lb = 8mA
V
Voltage Drop (Pass Element PNP)
CE_SAT
Fig. 4, Output Current vs.
Unit
mA
mA
mA
mS
K
mA
mA
pF
pF
pF
ns
ns
COLLECTOR VOLTAGE(V)
V
V
V
V
A
lb = 7mA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
D
lb = 6mA
= 1MHz
GS
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
DS
DS
DS
DD
GS
G
= 200mA,
= 25 , R
= 0V, I
=0V, V
= 20V, V
= -20V, V
= V
= 5V, I
= 10V, I
= 10V,
= 5V, I
= 10V, I
= -25V, V
= 30V, V
= 0V, I
lb = 5mA
2 x V
2 x V
2 x V
Test Condition
GS
lb = 4mA
, I
4.0
DS(ON)
DS(ON)
D
D
D
S
DS
DS(ON)
D
D
D
L
= 10uA
= 50mA
= 115 mA*
T = 25°C
DS
= 50mA
GS
lb = 1mA
DS
GS
= 0.25mA
= 500mA
= 150
= 60V
= 115mA
A
4.5
lb = 3mA
= 0V
=10V,
lb = 2mA
= 0V
, I
, I
= 0V,
LMN400B01
D
D
5.0
= 115 mA
= 200 mA
5.5