This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Test Conditions (Note1 40A -250 -250 A, Referenced - 250 -250 A, Referenced A,T = 125 1.0 MHz GEN (Note (Note Min Typ Max Units mV 100 nA -100 -6.4 mV/ C 0.016 0.020 0.022 0.035 0.018 0.023 1850 pF 230 6 0.9 1.2 V FDP5680/FDB5680 Rev. C ...
... ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 2.3 C 0.01 0 SINGLE PULSE TIME (SEC) R ( =2.3 °C/W JC P(pk ( Duty Cycle 1000 3000 10000 FDP5680/FDB5680 Rev. C ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...