PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet

MOSFET Power N-Ch 100V 5 mOhms

PSMN5R0-100PS,127

Manufacturer Part Number
PSMN5R0-100PS,127
Description
MOSFET Power N-Ch 100V 5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PSMN5R0-100PS,127

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 50V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
 Details
Other names
934065172127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Rev. 2 — 15 April 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
see
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
Figure 1
Figure 12
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure 13
Figure
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
13;
[1]
[2]
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
7.7
4.3
Max Unit
100
120
338
175
9
5
V
A
W
°C
mΩ
mΩ

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PSMN5R0-100PS,127 Summary of contents

Page 1

... PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Rev. 2 — 15 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... Unclamped avalanche energy R GS Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS Min = Figure 14 °C; - j(init) ≤ 100 V; sup Graphic symbol ...

Page 3

... Unclamped V sup GS 003aaf735 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS Min - = 20 kΩ -20 Figure 1 - [1] Figure ° -55 - ° 120 A ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN5R0-100PS Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS 003aaf734 =10 μ 100 μ 100 (V) DS Min Typ ...

Page 5

... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.67 Ω 4.7 Ω °C G(ext All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS Min Typ Max Unit 100 - - 4 0.08 10 µ 500 µ 100 ...

Page 6

... I D (A) 200 160 120 (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS Min Typ Max - 0.8 1 235 - 003aaf724 = 175 ° ° ...

Page 7

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...

Page 8

... I (A) D Fig 14. Gate charge waveform definitions 003aaf729 150 200 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS GS(pl) V GS(th GS1 GS2 G(tot) ...

Page 9

... Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in TO-220 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN5R0-100PS v.2 20110415 • Modifications: Status changed from objective to product. PSMN5R0-100PS v.1 20101227 PSMN5R0-100PS Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Data sheet status Change notice Product data sheet ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 April 2011 Document identifier: PSMN5R0-100PS ...

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