FDMC86102LZ Fairchild Semiconductor, FDMC86102LZ Datasheet - Page 3

• Manufacturer Part Number: FDMC86102LZ
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC86102LZ

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 7 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP-8
• Gate Charge Qg: 15.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

FDMC86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
25
20
15
10
Figure 3. Normalized On-Resistance
5
0
Figure 1.
5
0
-75
0.0
1.0
Figure 5. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
DS
= 6.5 A
-50
= 10 V
vs Junction Temperature
= 5 V
0.5
1.5
T
V
V
-25
J
DS
On-Region Characteristics
GS
,
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
GS
1.0
2.0
0
T
V
J
= 3.5 V
GS
= 150
= 4.5 V
V
25
GS
μ
s
o
1.5
2.5
= 10 V
C
50
T
J
= 25 °C unless otherwise noted
T
μ
J
2.0
3.0
75
s
T
= -55
J
= 25
o
100 125 150
C )
o
C
V
o
GS
V
2.5
3.5
C
GS
= 2.5 V
= 3 V
3.0
4.0
3
0.001
0.01
100
0.1
80
60
40
20
30
10
Figure 2.
Figure 4.
8
7
6
5
4
3
2
1
0
0
1
0.0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
2
Figure 6.
0
V
GS
V
V
= 0 V
GS
0.2
SD
5
= 2.5 V
Normalized On-Resistance
T
, BODY DIODE FORWARD VOLTAGE (V)
V
On-Resistance vs Gate to
J
GS
Source Voltage
= 150
I
Source to Drain Diode
D
4
,
,
T
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
V
T
J
I
0.4
J
GS
D
10
= 125
o
= 25
= 6.5 A
C
= 3 V
o
o
C
C
0.6
15
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
T
= 4.5 V
GS
J
T
= -55
0.8
20
= 3.5 V
J
= 25
o
8
C
www.fairchildsemi.com
o
C
V
1.0
GS
25
= 10 V
μ
μ
s
s
1.2
10
30