STK15C68-P35 Cypress Semiconductor Corp, STK15C68-P35 Datasheet - Page 7

STK15C68-P35

Manufacturer Part Number
STK15C68-P35
Description
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of STK15C68-P35

Word Size
8b
Organization
8Kx8
Density
64Kb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
5V
Package Type
PDIP
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
0C to 70C
Pin Count
28
Mounting
Through Hole
Supply Current
75mA
Lead Free Status / Rohs Status
Not Compliant
The STK15C68 is a versatile memory chip that pro-
vides several modes of operation. The STK15C68
can operate as a standard 8K x 8
8K x 8 Nonvolatile Elements shadow to which the
SRAM
SRAM
NOISE CONSIDERATIONS
Note that the STK15C68 is a high-speed memory
and so must have a high-frequency bypass capaci-
tor of approximately 0.1μF connected between V
and V
possible. As with all high-speed
careful routing of power, ground and signals will
help prevent noise problems.
SRAM READ
The STK15C68 performs a
and G are low and W is high. The address specified
on pins A
bytes will be accessed. When the
by an address transition, the outputs will be valid
after a delay of t
initiated by E or G, the outputs will be valid at t
at t
outputs will repeatedly respond to address changes
within the t
sitions on any control input pins, and will remain valid
until another address change or until E or G is
brought high or W is brought low.
SRAM WRITE
A
low. The address inputs must be stable prior to
entering the
until either E or W goes high at the end of the cycle.
The data on the common I/O pins DQ
ten into the memory if it is valid t
of a W controlled
E controlled
It is recommended that G be kept high during the
entire
the common I/O lines. If G is left low, internal circuitry
will turn off the output buffers t
March 2006
WRITE
GLQV
SS
can be updated in nonvolatile mode.
, whichever is later (
WRITE
information can be copied, or from which the
, using leads and traces that are as short as
cycle is performed whenever E and W are
0-12
AVQV
WRITE
WRITE
cycle to avoid data bus contention on
determines which of the 8,192 data
access time without the need for tran-
AVQV
WRITE
.
(
cycle and must remain stable
READ
or t
READ
cycle #1). If the
READ
DVEH
WLQZ
before the end of an
cycle #2). The data
DVWH
CMOS
cycle whenever E
after W goes low.
READ
SRAM
DEVICE OPERATION
before the end
0-7
ICs, normal
will be writ-
. It has an
is initiated
READ
ELQV
or
CC
is
7
SOFTWARE NONVOLATILE STORE
The STK15C68 software
executing sequential
address locations. During the
of the previous nonvolatile data is first performed,
followed by a program of the nonvolatile elements.
The program operation copies the
nonvolatile memory. Once a
ated, further input and output are disabled until the
cycle is completed.
Because a sequence of
addresses is used for
tant that no other
vene in the sequence or the sequence will be
aborted and no
To initiate the software
READ
The software sequence must be clocked with E con-
trolled
Once the sixth address in the sequence has been
entered, the
chip will be disabled. It is important that
and not
although it is not necessary that G be low for the
sequence to be valid. After the t
been fulfilled, the
READ
SOFTWARE NONVOLATILE RECALL
A software
of
ware
the following sequence of
performed:
1. Read address
2. Read address
3. Read address
4. Read address
5. Read address
6. Read address
1. Read address
2. Read address
3. Read address
4. Read address
5. Read address
6. Read address
READ
Document Control # ML0009 rev 0.2
STORE
sequence must be performed:
and
READ
operations in a manner similar to the soft-
WRITE
WRITE
RECALL
s.
initiation. To initiate the
STORE
STORE
cycles be used in the sequence,
operation.
SRAM
READ
cycle is initiated with a sequence
0000 (hex)
1555 (hex)
0AAA (hex)
1FFF (hex)
10F0 (hex)
0F0F (hex)
0000 (hex)
1555 (hex)
0AAA (hex)
1FFF (hex)
10F0 (hex)
0F0E (hex)
cycle will commence and the
READ
STORE
or
STORE
will again be activated for
STORE
or
RECALL
READ
cycles from six specific
WRITE
READ
STORE
STORE
initiation, it is impor-
cycle, the following
STORE
operations must be
cycle is initiated by
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate STORE cycle
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate RECALL cycle
will take place.
s from specific
SRAM
accesses inter-
STK15C68
cycle an erase
cycle time has
RECALL
cycle is initi-
READ
data into
cycles
cycle,

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