2N930JANTX MICROSEMI, 2N930JANTX Datasheet
2N930JANTX
Manufacturer Part Number
2N930JANTX
Description
Manufacturer
MICROSEMI
Datasheet
1.2N930JANTX.pdf
(2 pages)
Specifications of 2N930JANTX
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
30mA
Dc Current Gain (min)
150
Power Dissipation
300mW
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N930JANTX
Manufacturer:
Skyworks
Quantity:
1 400
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 2.0 mW/
2) Derate linearly 4.0 mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
I
V
V
V
V
V
V
C
CB
CB
EB
EB
CE
CE
= 10 mAdc
= 60 Vdc
= 45 Vdc
= 45 Vdc
= 5.0 Vdc
= 6.0 Vdc
= 5.0 Vdc
Characteristics
Ratings
0
0
C above T
C above T
Characteristics
@ T
@ T
A
C
A
C
= +25
= +25
= +25
= +25
0
0
C
C
0
0
C
C
C
(2)
(1)
= +25
0
C unless otherwise noted)
Symbol
Symbol
T
V
V
V
R
J
,
P
CEO
CBO
EBO
I
C
T
T
JC
stg
-55 to +200
Value
Max.
V
300
600
Symbol
6.0
45
60
30
97
(BR)CEO
I
I
I
I
CBO
EBO
CEO
CES
TECHNICAL DATA
Units
mAdc
0
Unit
Vdc
Vdc
Vdc
mW
C/W
0
C
Min.
45
TO- 18*
(TO-206AA)
*See appendix A for
package outline
Qualified Level
Max.
5.0
2.0
2.0
10
10
10
JANTXV
JANTX
JAN
Page 1 of 2
Unit
Vdc
120101
Adc
Adc
Adc
Adc
Adc
Adc
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2N930JANTX Summary of contents
Page 1
NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices 2N930 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward-Current Transfer Ratio Adc 5.0 Vdc 500 Adc 5.0 Vdc mAdc 5.0 Vdc C CE ...