BFP 640ESD E6327 Infineon Technologies, BFP 640ESD E6327 Datasheet - Page 13
BFP 640ESD E6327
Manufacturer Part Number
BFP 640ESD E6327
Description
RF Germanium Robust Hi Perform Lo Noise Bip RF Trans
Manufacturer
Infineon Technologies
Datasheet
1.BFP_640ESD_E6327.pdf
(29 pages)
Specifications of BFP 640ESD E6327
Lead Free Status / Rohs Status
Details
Other names
BFP640ESDE6327XT
5.3
Measurement setup is a test fixture with Bias T’s in a 50 Ω system,
Figure 2
Table 7
Parameter
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
Data Sheet
IN
Frequency Dependent AC Characteristics
BFP640ESD Testing Circuit
AC Characteristics,
Bias-T
VB
V
CE
= 3 V,
Symbol
G
G
S
S
NF
G
OP
OIP
21
21
(Pin 1)
ms
ms
ass
min
E
B
1dB
3
f
= 150 MHz
Top View
Min.
–
–
–
–
–
–
–
–
13
Typ.
34
39.5
25
35
0.6
30
11
25
Values
C
E
T
A
= 25 °C
–
–
–
–
–
–
–
–
Max.
Unit
dB
dB
dB
dBm
VC
Bias -T
Electrical Characteristics
Revision 1.0, 2010-06-29
Note / Test Condition
I
I
Z
I
I
Z
I
I
Z
I
I
C
C
C
C
C
C
C
C
S
S
S
= 6 mA
= 30 mA
= 6 mA
= 30 mA
= 6 mA
= 6 mA
= 30 mA
= 30 mA
=
=
=
Z
Z
Z
L
opt
L
= 50 Ω
= 50 Ω
BFP640ESD
OUT