BFY182 (P) Infineon Technologies, BFY182 (P) Datasheet - Page 3

• Manufacturer Part Number: BFY182 (P)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY182 (P)

• Package: Micro-X
• Comment: also available in (S) and (H) quality
• Vceo (max): 12.0 V
• Ic(max): 35.0 mA
• Ptot (max): 250.0 mW
• Lead Free Status / Rohs Status: No
• Other names: BFY182PNZ

Electrical Characteristics (continued)
Notes.:
1)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Base-Emitter forward voltage
I
DC current gain
I
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
E
C
C
C
C
C
C
S
S
S
CB
CE
EB
= 15 mA, V
= 20 mA, I
= 5 mA, V
= 15 mA, V
= 15 mA, V
= 5 mA, V
= 15 mA, V
= Z
= Z
= Z
G
= 10 V, V
= 10 V, V
= 0.5V, V
ma
L
Sopt
Sopt
= 50 

, Z
S
S
12
21
CE
CE
L
C
= Z
CE
BE
BE
CB
CE
CE
CE
= 0
(
= 6 V
= 5 V, f = 2 GHz,
k
= 5 V, f = 2 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= vcb = 0, f = 1 MHz
= 5 V, f = 500 MHz
= 8 V, f = 500 MHz
= 5V, f = 2 GHz
Lopt

k
2

1
)
,
G
ms

S
S
12
21
Symbol
V
h
f
C
C
C
F
Gma
|S
T
FE
FBE
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
-
55
6.5
-
-
-
-
-
13.5
10
Values
typ.
-
100
7.5
8
0.26
0.34
0.8
2.4
14.5
11
max.
1
170
-
-
0.36
-
1.1
2.9
-
-
V2, February 2011
BFY182
Unit
V
-
GHz
pF
pF
pF
dB
dB
dB