MCP607-I/P Microchip Technology Inc., MCP607-I/P Datasheet - Page 3

• Manufacturer Part Number: MCP607-I/P
• Description: DUAL 25 UA, 2.5V OP AMP, I TEMP
• Manufacturer: Microchip Technology Inc.

Specifications of MCP607-I/P

• Amplifier Type: General Purpose, High Impedance, Low Offset Voltage, Micropower, Precision, Rail-to-Rail, Single Supply
• Bandwidth: 155 kHz
• Common Mode Rejection Ratio: 91
• Current, Input Bias: 80 pA
• Current, Input Offset: 1 pA
• Current, Output: ±30 mA
• Current, Supply: ±30 mA
• Number Of Amplifiers: Dual
• Package Type: PDIP-8
• Slew Rate: 0.08
• Temperature, Operating, Range: -40 to +85 °C
• Voltage, Gain: 121 dB
• Voltage, Input: 2.2 to 2.8 V
• Voltage, Noise: 38 nV/sqrt Hz
• Voltage, Offset: +250 μV
• Voltage, Output, High: 2480 mV
• Voltage, Output, Low: 2480 mV
• Voltage, Supply: 2.5 to 6 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AC CHARACTERISTICS
MCP608 CHIP SELECT CHARACTERISTICS
FIGURE 1-1:
Pin on the MCP608.
© 2008 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, V
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output Hi-Z
CS Hysteresis
V
OUT
OUT
OUT
CS
I
I
CS
SS
≈ V
≈ V
DD
DD
(typical)
(typical)
/2, V
/2, V
-50 nA
-50 nA
Hi-Z
Parameters
t
L
L
ON
Parameters
= V
= V
V
DD
DD
IL
/2, R
/2, R
Timing Diagram for the CS
L
L
-18.7 µA
(typical)
= 100 kΩ to V
= 100 kΩ to V
V
IH
L
L
t
and C
and C
OFF
(typical)
(typical)
-50 nA
-50 nA
GBWP
I
Sym
O(LEAK)
V
PM
SR
E
e
Sym
i
I
t
I
Hi-Z
ni
V
CSH
t
HYST
V
CSL
I
OFF
ni
ni
ON
SS
L
L
IH
IL
= 60 pF, and CS is tied low (refer to
= 60 pF, and CS is tied low (refer to
DD
DD
0.8 V
Min
V
-0.1
—
—
—
—
—
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
-2
Min
SS
—
—
—
—
—
—
DD
-0.05
0.01
0.01
Typ
0.1
0.6
10
—
—
9
0.08
Typ
155
2.8
62
38
3
0.2 V
Max
V
100
0.1
—
—
—
—
—
DD
SS
SS
DD
Max
—
—
—
—
—
—
= GND, T
= GND, T
Units
µA
µA
µA
nA
µs
µs
Figure 1-2
Figure 1-2
V
V
V
MCP606/7/8/9
nV/√Hz
fA/√Hz
A
A
µV
Units
V/µs
kHz
= +25°C, V
= +25°C, V
CS = 0.2V
CS = V
CS = V
CS = V
CS = 0.2V
G = +1 V/V, R
CS = 0.8V
G = +1 V/V, R
V
°
P-P
DD
= 5.0V
and
and
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
DD
DD
DD
Figure
Figure
DD
DD
DD
CM
CM
Conditions
to V
to V
L
L
= V
= V
Conditions
= 1 kΩ to V
= 1 kΩ to V
1-3).
1-3).
DS11177E-page 3
DD
DD
OUT
OUT
/2,
/2,
= 0.9 V
= 0.1 V
SS
SS
DD
DD
/2,
/2,