NBVSPA024LNHTAG ON Semiconductor, NBVSPA024LNHTAG Datasheet - Page 3

• Manufacturer Part Number: NBVSPA024LNHTAG
• Description: IC VCXO LVDS 160MHZ 6CLCC
• Manufacturer: ON Semiconductor
• Series: PureEdge™r
• Type: Voltage Controlled Crystal Oscillator (VCXO)r

Specifications of NBVSPA024LNHTAG

• Count: -
• Frequency: 160MHz
• Voltage - Supply: 2.97 V ~ 3.63 V
• Current - Supply: 75mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Mounting Type: *
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 3.
4. Parameter guaranteed by design verification not tested in production.
Table 5. DC CHARACTERISTICS
Table 4. MAXIMUM RATINGS
Symbol
I
V
T
V
OSC
T
Symbol
T
stg
DD
sol
DV
DV
IN
A
V
V
V
V
I
V
V
I
DD
I
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OS
OH
OD
IL
OL
IH
IL
OD
OS
Positive Power Supply
Control Input (V
Output Short Circuit Current
Operating Temperature Range
Storage Temperature Range
Wave Solder
Change in Magnitude of V
Complementary Output States
Offset Voltage
Change in Magnitude of V
Complementary Output States
Power Supply Current
OE and FSEL Input HIGH Voltage
OE and FSEL Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Differential Output Voltage
C
Characteristic
Parameter
and OE)
CLK or CLK to GND
(V
DD
OD
OS
CLK to CLK
= 3.3 V ±10%, GND = 0 V, T
for
for
OE
OE
http://onsemi.com
Conditions
See Figure 4
Condition 1
(Note 4)
(Note 4)
Continuous
Continuous
GND = 0 V
3
A
= −40°C to +85°C) (Note 3)
GND − 300
V
V
IN
IN
2000
−100
−100
1125
Min.
900
250
≥ GND − 200 mV
Condition 2
≤ V
0
0
DD
+ 200 mV
1425
1075
Typ.
75
1
1
−55 to +120
−40 to +85
Rating
260
4.6
12
24
Max.
+100
+100
1375
1600
V
100
800
450
25
25
DD
Units
Units
mA
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
mA
°C
°C
°C
V
V