MCP6002-E/SN Microchip Technology Inc., MCP6002-E/SN Datasheet - Page 3

• Manufacturer Part Number: MCP6002-E/SN
• Description: DUAL 1.8V, 1MHZ OP, E TEMP
• Manufacturer: Microchip Technology Inc.

Specifications of MCP6002-E/SN

• Amplifier Type: General Purpose, Low Power, Power, Rail-to-Rail, Single Supply
• Bandwidth: 1 MHz
• Common Mode Rejection Ratio: 76
• Current, Input Bias: 1100 pA
• Current, Input Offset: ±1 pA
• Current, Output: ±30 mA
• Current, Supply: ±30 mA
• Number Of Amplifiers: Dual
• Package Type: SOIC-8
• Slew Rate: 0.6
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Gain: 112 dB
• Voltage, Input: 1.5 to 2.1 V
• Voltage, Noise: 28 nV/sqrt Hz
• Voltage, Offset: +4.5 mV
• Voltage, Output, High: 1775 mV
• Voltage, Output, Low: 1775 mV
• Voltage, Supply: 1.8 to 6 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
1.1
The test circuits used for the DC and AC tests are
shown in
capacitors are laid out according to the rules discussed
in Section 4.4 “Supply Bypass”.
FIGURE 1-1:
Most Non-Inverting Gain Conditions.
© 2008 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC (150 mil)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
V
L
Note:
V
DD
= V
IN
/2
DD
Test Circuits
R
R
/2, V
G
N
Figure 1-1
The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (T
specification of +150°C.
OUT
Parameters
Parameters
MCP600X
≈ V
V
DD
AC and DC Test Circuit for
DD
and
/2, R
0.1 µF
R
Figure
L
F
= 10 kΩ to V
1 µF
1-2. The bypass
C
L
L
V
, and C
GBWP
Sym
θ
θ
θ
θ
θ
θ
θ
θ
L
Sym
T
T
T
T
PM
SR
E
e
JA
JA
JA
JA
JA
JA
JA
JA
V
R
i
A
A
A
A
ni
ni
ni
OUT
L
L
= 60 pF (refer to
A
Min
Min
-40
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= +25°C, V
DD
= +1.8V to +5.5V and V
FIGURE 1-2:
Most Inverting Gain Conditions.
V
Typ
1.0
0.6
6.1
0.6
V
MCP6001/1R/1U/2/4
90
28
DD
Typ
331
256
163
206
120
100
85
70
—
—
—
—
IN
DD
/2
Figure 1-1
= +1.8 to 5.5V, V
R
R
G
N
J
Max
) must not exceed the Absolute Maximum
—
—
—
—
—
—
+125
+125
+150
Max
+85
—
—
—
—
—
—
—
—
MCP600X
and
nV/√Hz
fA/√Hz
V
µVp-p
Units
SS
MHz
V/µs
AC and DC Test Circuit for
Figure 1-2
DD
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°
°C
°C
°C
°C
= GND.
SS
0.1 µF
R
= GND, V
F
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Note
).
1 µF
Conditions
Conditions
DS21733H-page 3
CM
C
= V
L
V
DD
L
V
R
/2,
OUT
L