SI1021R-T1-GE3 Siliconix / Vishay, SI1021R-T1-GE3 Datasheet
SI1021R-T1-GE3
Specifications of SI1021R-T1-GE3
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SI1021R-T1-GE3 Summary of contents
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... SC-75A (SOT-416 Marking Code Top View Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free) Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current a Power Dissipation a Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a ...
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... Si1021R Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71410 S-81543-Rev. D, 07-Jul- °C, unless otherwise noted A 1200 600 800 1000 1.2 1.5 1.8 Si1021R Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss oss 8 C rss ...
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... Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0 250 µA D 0.3 0.2 0.1 - 0.0 - 0.1 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...