NTE2409 NTE Electronics, Inc., NTE2409 Datasheet - Page 2

• Manufacturer Part Number: NTE2409
• Description: Transistor; PNP; SOT-23; 80 V (Max.); 65 V (Max.); 5 V (Max.); 100 mA (Max.)
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, General Purposer

Specifications of NTE2409

• Complement To: NPN
• Current, Collector: 100 mA
• Current, Collector Cutoff: 1 nA (Typ.)
• Current, Continuous Collector: 100 mA (Max.)
• Current, Emitter: 200 mA
• Current, Gain: 220 to 475
• Frequency: 150 MHz
• Gain, Dc Current, Minimum: 220
• Material Type: Silicon
• Package Type: SOT-23
• Polarity: PNP
• Power Dissipation: 200 mW
• Primary Type: Si
• Temperature Range, Junction, Operating: 150°C (Max.)
• Transistor Polarity: PNP
• Voltage, Base To Emitter: 600 mV (Min.) @ 2 mA
• Voltage, Breakdown, Collector To Emitter: 65 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 65 V
• Voltage, Collector To Emitter, Saturation: 250 mV
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 250 mV (Typ.)
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 3. V
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
Small–Signal Current Gain
Noise Figure
BE(sat)
Parameter
decreases by about 1.7mV with increasing temperature.
B
.118 (3.0) Max
.074 (1.9)
C
Symbol
.016 (0.48)
V
.007 (0.2)
BE(sat)
h
E
NF
h
C
f
FE
T
fe
c
J
= +25 C unless otherwise specified)
.037 (0.95)
I
I
V
V
V
V
V
B = 200Hz, R
C
C
CE
CE
CB
CE
CE
= 10mA, I
= 100mA, I
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 5V, I
.043 (1.1)
(2.5)
.098
Max
Test Conditions
C
C
C
C
B
E
= 2mA
= 10mA, f = 35MHz
= 2mA
= 200 A, f = 1kHz,
B
S
= 0.5mA, Note 3
= I
= 5mA, Note 3
= 2k
e
= 0, f = 1MHz
(1.3)
.051
Min
220
75
–
–
–
–
–
Typ
700
850
150
4.5
–
–
2
Max
475
900
10
–
–
–
–
Unit
MHz
mV
mV
pF
dB