NTE326 NTE Electronics, Inc., NTE326 Datasheet
NTE326
Manufacturer Part Number
NTE326
Description
JFET; 7.5 V; 10; 40; 4.5 V; 310 mW
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE326.pdf
(2 pages)
Specifications of NTE326
Capacitance, Input
7 pF
Capacitance, Reverse Recovery
2 pF
Channel Type
P-Channel
Current, Drain
9 mA
Current, Gate
10 mA
Current, Gate Reverse
5 nA
Noise, Input Voltage
115 nV/√Hz
Noise, Voltage
115 nV/√Hz
Package Type
TO-226AA (TO-92)
Polarization
P-Channel
Power Dissipation
310 mW
Temperature, Operating, Maximum
+135 °C
Temperature, Operating, Minimum
–65 °C
Transistor Type
P-Channel
Voltage, Breakdown, Gate To Source
40 V
Voltage, Drain To Gate
40 V
Voltage, Gate To Source, Breakdown
40 V
Voltage, Gate To Source, Cut-off
7.5 V
Voltage, Gate To Source, Forward
4.5 V
Absolute Maximum Ratings: (T
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Functional Characteristics
Noise Figure
Equivalent Short–Circuit Input Noise
Voltage
Derate Above 25 C
Parameter
DG
G(f)
Silicon P–Channel JFET Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose AF Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
= +25 C unless otherwise specified)
GSR
V
A
Symbol
V
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
GS(off)
I
|y
V
C
C
= +25 C unless otherwise specified)
|y
GSS
DSS
NF
e
GS
os
rss
iss
fs
n
|
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
D
J
I
V
V
I
I
V
V
V
V
V
V
f = 100Hz, BW = 1Hz
V
BW = 1Hz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
D
D
NTE326
GS
GS
DS
DS
DS
DS
DS
DS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10 A, V
= 1 A, V
= 0.2mA, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 20V, V
= 20V, V
Test Conditions
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 15V
= 0
= 0
= 0, T
= 0, f = 1kHz
= 0, f = 1kHz
= 0, f = 1kHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0, R
= 0, f = 100Hz,
= 15V
A
G
= +100 C
= 1M ,
1500
Min
1.0
0.8
40
–
–
2
–
–
–
–
–
Typ
1.0
60
–
–
–
–
–
–
–
–
5
1
–65 to +135 C
–55 to +150 C
5000
Max
115
7.5
4.5
2.5
75
–
5
1
9
7
2
2.82mW/ C
nV/pHz
310mW
Unit
mA
mho
mho
nA
dB
10mA
pF
pF
V
V
V
A
40V
40V
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NTE326 Summary of contents
Page 1
... Input Capacitance Reverse Transfer Capacitance Functional Characteristics Noise Figure Equivalent Short–Circuit Input Noise Voltage NTE326 General Purpose AF Amplifier = +25 C unless otherwise specified GSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...