NTE179 NTE Electronics, Inc., NTE179 Datasheet

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NTE179

Manufacturer Part Number
NTE179
Description
Transistor; Audio Power; PNP; 40 V; 90 V; 25 A; 5 A; 106 W; 0.8 degC/W; 2 V; TO
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet

Specifications of NTE179

Amplifier Type
Audio Power
Bandwidth, Current Gain
500 kHz
Current, Base
5 A
Current, Collector
25 A
Current, Gain
65 to 300
Frequency
500 kHz
Package Type
TO-3
Polarity
PNP
Power Dissipation
106 W
Primary Type
Ge
Resistance, Thermal, Junction To Case
0.8 °C/W
Temperature, Operating, Maximum
110 °C
Temperature, Operating, Minimum
-65 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Base
40 V
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
2 V
Voltage, Collector To Base
90 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
2 V
Voltage, Saturation, Collector To Emitter
0.5 V
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switch-
ing applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
D Low Collector–Emitter Saturation Voltage:
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Volatge, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature, T
Storage Junction Temperature, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Collector–Emitter Cutoff Current
V
Derate above +25 C
CE(sat)
Parameter
= 0.5V (Max) @ I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Power Amplifier, High Current Switch
EB
CB
C
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
A
Germanium PNP Transistor
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= +25 C unless otherwise noted)
= 5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
(BR)CBO
(BR)EBO
CE(sus)
I
I
I
CBO
CER
CEX
D
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE179
I
I
I
V
V
V
C
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CE
CE
= 100mA, I
= 100mA, I
= 5A
= 2V, I
= 90V, V
= 50V, R
Test Conditions
E
= 0
BE(off)
EB
B
C
= 0
= 0
= 100
= 0.2V
Min
40
40
2
Typ
–65 to + 110 C
–65 to + 110 C
Max Unit
200
20
10
1.25W/ C
0.8 C/W
106W
mA
mA
40V
90V
25A
V
V
V
A
2V
5A

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NTE179 Summary of contents

Page 1

... Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switch- ing applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: D Low Collector–Emitter Saturation Voltage ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current Gain–Bandwidth Product .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) = +25 C unless otherwise noted) A Symbol Test ...

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