SB3H100-E3/54/BKN General Semiconductor / Vishay, SB3H100-E3/54/BKN Datasheet

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SB3H100-E3/54/BKN

Manufacturer Part Number
SB3H100-E3/54/BKN
Description
RECTIFIER, 3A, 100V AXIAL SKY RECTIFIER
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of SB3H100-E3/54/BKN

Current, Forward
3 A
Current, Reverse
4 mA
Current, Surge
100 A
Package Type
DO-201AD
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-55 to +175 °C
Voltage, Forward
0.65 V
Voltage, Reverse
100 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
Critical rate of rise of reverse voltage
Storage temperature range
Maximum operating junction temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage
Maximum reverse current
at rated V
(1)
R
T
(2)
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
DO-201AD
A
High-Voltage Schottky Rectifier
= 25 °C unless otherwise noted)
I
I
F
F
p
= 3.0 A
= 3.0 A
TEST CONDITIONS
= 2.0 µs, 1 kHz
90 V, 100 V
175 °C
0.65 V
100 A
20 µA
3.0 A
L
= 90 °C
T
T
T
T
J
J
J
J
A
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C unless otherwise noted)
SYMBOL
SYMBOL
V
V
I
dV/dt
T
I
I
V
F(AV)
RRM
FEATURES
TYPICAL APPLICATIONS
For
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
FSM
RWM
RRM
STG
V
T
I
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
DC
R
J
F
and WEEE 2002/96/EC
use
Vishay General Semiconductor
in
SB3H90
SB3H90
90
90
90
middle
- 55 to + 175
SB3H90 & SB3H100
10 000
0.80
0.65
100
175
3.0
1.0
4.0
20
voltage
SB3H100
SB3H100
100
100
100
high
frequency
UNIT
UNIT
V/µs
mA
µA
°C
°C
V
V
V
A
A
A
V
1

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SB3H100-E3/54/BKN Summary of contents

Page 1

... T STG °C unless otherwise noted) A TEST CONDITIONS SYMBOL = 3 ° 3 125 ° ° 125 °C J SB3H90 & SB3H100 Vishay General Semiconductor in middle voltage high SB3H90 SB3H100 90 100 90 100 90 100 3.0 100 1.0 10 000 - 175 175 SB3H90 SB3H100 0.80 0.65 20 4.0 frequency ...

Page 2

... SB3H90 & SB3H100 Vishay General Semiconductor THERMAL CHARACTERISTICS (T PARAMETER (1) Maximum thermal resistance Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SB3H100-E3/54 1.09 SB3H100-E3/73 1.09 (1) SB3H100HE3/54 1.09 (1) SB3H100HE3/73 1.09 Note: (1) Automotive grade AEC Q101 qualified ...

Page 3

... DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. SB3H90 & SB3H100 Vishay General Semiconductor 0 0 Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance 100 3 ...

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