NTE452 NTE Electronics, Inc., NTE452 Datasheet
NTE452
Manufacturer Part Number
NTE452
Description
Transistor, JFET, N-Channel, VHF Amp/Mixer, NF=4dB, TO72
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE452.pdf
(2 pages)
Specifications of NTE452
Capacitance, Input
4 pF
Capacitance, Reverse Recovery
0.8 pF
Capacitance, Source Off
2 pF
Channel Type
N-Channel
Current, Drain
15 mA
Current, Gate
10 mA
Current, Gate Reverse
100 pA
Package Type
3-Pin Package
Polarization
N-Channel
Power Dissipation
300 mW
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–65 °C
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
30 V
Voltage, Drain To Gate
35 V
Voltage, Drain To Source
30 V
Voltage, Gate To Source, Breakdown
30 V
Voltage, Gate To Source, Cut-off
6 V
Voltage, Gate To Source, Forward
1 V
Description:
The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package de-
signed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
Gate–Source Forward Voltage
ON Characteristics (Note 1)
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Real Part of Forward Transfer
Admittance
Derate Above 25 C
Parameter
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
Silicon N–Channel JFET Transistor
GS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
V
Symbol
V
Y
(BR)GSS
V
= +25 C unless otherwise specified)
I
I
GS(off)
V
|Y
fs(real)
GSS
DSS
GS(f)
GS
VHF Amplifier, Mixer
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
|
I
V
V
I
I
I
V
V
V
D
G
D
D
G
GS
GS
DS
DS
DS
= 1nA, V
= 0.5mA, V
J
= 1 s, V
= 1mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE452
= 15V, V
= 15V, V
= 15V, V
= 20V, V
= 20V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
DS
DS
DS
GS
GS
GS
DS
DS
DS
= 0
= 15V
= 0
= 0, f = 400MHz
= 0
= 0, T
= 0
= 0, f = 1kHz, Note 1
= 15V
1%.
A
= +150 C
4500
4000
Min
1.0
30
–
–
–
–
5
Typ
–
–
–
–
–
–
–
–
–
–65 to +175 C
–65 to +175 C
7500
Max
100
200
5.5
1.0
1.71mW/ C
15
–
6
–
300mW
10mA
Unit
mhos
mhos
mA
pA
pA
V
V
V
V
30V
35V
30V
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NTE452 Summary of contents
Page 1
... Silicon N–Channel JFET Transistor Description: The NTE452 is a silicon, N–channel junction field effect tranistor (JFET TO72 type package de- signed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings: Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation (T ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Small–Signal Characteristics (Cont’d) Real Part of Input Admittance Output Admittance Real Part of Output Admittance Imaginary Part of Input Admittance Imaginary Part of Output Admittance Input Capacitance Reverse Transfer Capacitance Common–Source Output Capacitance Functional Characteristics ...