NTE198 NTE Electronics, Inc., NTE198 Datasheet
NTE198
Manufacturer Part Number
NTE198
Description
Transistor, NPN; TO-220; NPN; 400 V; 500 V; 5 V; 1 A; 40 W; -65 to 150 degC; 10
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE198.pdf
(2 pages)
Specifications of NTE198
Current, Collector
1 A
Current, Gain
30 to 150
Device Dissipation
40 W
Frequency
10 MHz
Gain, Dc Current, Minimum
10
Package Type
TO-220
Polarity
NPN
Power Dissipation
2 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.125 °C/W
Temperature, Junction, Operating
-65 to 150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Base
500 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Description:
The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for
use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode
applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Unclamped Inducting Load Energy, E
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak
Derate above +25 C
Derate above +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
A
CB
C
High Voltage Power Transistor
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
300 s, Duty Cycle
CEO(sus)
I
I
I
CEO
CES
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE198
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
C
thJA
CE
CE
BE
= 30mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 300V, I
= 500V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
B
= 0
2%.
B
= 0, Note 1
BE
= 0
= 0
Min
400
–
–
–
Typ
–
–
–
–
–65 to +150 C
–65 to +150 C
Max Unit
0.016W/ C
3.125 C/W
–
1
1
1
0.32W/ C
62.5 C/W
600mA
20mJ
400V
500V
mA
mA
mA
40W
V
2W
5V
1A
2A
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NTE198 Summary of contents
Page 1
... Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode applications. Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage Emitter–Base Voltage, V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current Gain–Bandwidth Product Small–Signal Current Gain Note 1. Pulse test: Pulse Width .147 (3.75) Dia Max .070 (1.78) Max = ...