IRLL110PBF Vishay PCS, IRLL110PBF Datasheet - Page 2

• Manufacturer Part Number: IRLL110PBF
• Description: MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V
• Manufacturer: Vishay PCS

Specifications of IRLL110PBF

• Current, Drain: 1.5 A
• Gate Charge, Total: 6.1 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 3.1 W
• Resistance, Drain To Source On: 0.54 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 16 ns
• Time, Turn-on Delay: 9.3 ns
• Transconductance, Forward: 0.57 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 2.5 V
• Voltage, Gate To Source: ±10 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

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IRLL110PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:
I
I
I
V
t
Q
t
I
L
L
R
GSS
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
rr
on
DSS
d(on)
r
d(off)
f
D
S
SD
fs
rr
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
V
R
g
gs
gd
(BR)DSS
DD
G
= 25Ω, I
=25V, starting T
/∆T
J
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
= 1.5A. (See Figure 12)
J
= 25°C, L = 25 mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
–––
–––
SD
0.57
Min. Typ. Max. Units
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
J
1.0
≤ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤5.6A, di/dt ≤ 75A/µs, V
0.50 0.65
–––
–––
–––
110
0.12
––– 0.54
––– 0.76
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
4.0
18
47
16
6.0
80
15
130
-100
12
2.5
–––
1.5
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
3.3
–––
2.0
6.1
2.6
–––
25
V/°C
µC
ns
nH
µA
nA
nC
pF
V
ns
A
Ω
V
V
S
DD
Between lead, 6mm(0.25in)
from package and center
of die contact.
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
R
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
≤ V
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
= 25°C, I
= 25°C, I
= 5.6A
= 5.6A
= 8.4 Ω,
= 12 Ω
(BR)DSS
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V
= -10V
= 50V
= 5.0V, I
= 4.0V, I
= 5.0V, See Fig. 6 and 13 „
= 0V
GS
, I
D
S
F
,
Conditions
D
D
= 5.6A
= 250µA
= 1.5A, V
Conditions
GS
D
D
= 250µA
= 0.90 A
GS
= 0.90A „
= 0.75A
= 0V, T
= 0V
D
= 1mA
GS
J
= 125°C
= 0V „
S
+L
G
D
)
S
D
2