VTT3323LAH Excelitas Technologies Sensors, VTT3323LAH Datasheet
VTT3323LAH
Manufacturer Part Number
VTT3323LAH
Description
PHOTOTRANSISTOR
Manufacturer
Excelitas Technologies Sensors
Datasheet
1.VTT3323LAH.pdf
(1 pages)
Specifications of VTT3323LAH
Lead Free Status / Rohs Status
RoHS Compliant part
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 3 mm diameter, lensed, end looking,
transparent plastic package. These devices are spectrally
and mechanically matched to the
IREDs.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
RoHS Compliant
.025" NPN Phototransistors
Clear Long T-1 (3 mm) Plastic Package
Part Number
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7
Refer to General Product Notes, page 2.
VTT3323LAH
VTT3324LAH
VTT3325LAH
Min.
2.0
4.0
6.0
mA
Max.
Light Current
—
—
—
l
C
fc (mW/cm
V
CE
VTE337xLAH
20 (1)
20 (1)
20 (1)
= 5.0 V
H
2
)
PACKAGE DIMENSIONS
Max.
(nA)
Dark Current
100
100
100
series of
H = 0
l
CEO
(Volts)
V
10
10
10
CE
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Continuous Power Dissipation:
Maximum Current:
Lead Soldering Temperature:
l
Breakdown
C
Volts, Min.
V
Collector
95
= 100 µA
BR(CEO)
H = 0
Storage Temperature:
Operating Temperature:
Derate above 30°C:
(1.6 mm from case, 5 sec. max.)
30
30
30
(See also typical curves, pages 91-92)
Phone: 877-734-6786 Fax: 450-424-3413
CASE 50A LONG T-1 (3 mm)
l
Breakdown
E
Volts, Min.
V
Emitter
VTT3323LAH, 4LAH, 5LAH
= 100 µA
inch (mm)
BR(ECO)
H = 0
5.0
5.0
5.0
CHIP TYPE: 25T
l
Volts, Max.
C
H = 400 fc
Saturation
V
Voltage
= 1.0 mA
CE(SAT)
0.25
0.25
0.25
Rise/Fall Time
R
l
C
µsec, Typ.
L
= 1.0 mA
= 100
t
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
R
3.0
4.0
5.0
www.perkinelmer.com/opto
/t
F
Response
Angular
±10°
±10°
±10°
Typ.
1/2
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