NTE199 NTE Electronics, Inc., NTE199 Datasheet
NTE199
Manufacturer Part Number
NTE199
Description
Transistor; TO-92; NPN; 50; 70; 5 V; 100 mA; 260 mW; -55 to 125 degC; 50 V; 70
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Gainr
Datasheet
1.NTE199.pdf
(2 pages)
Specifications of NTE199
Complement To
PNP
Current, Collector
100 mA
Current, Collector Cutoff
30 nA (Max.)
Current, Continuous Collector
100 mA
Current, Gain
400
Device Dissipation
0.36 W
Frequency
90 MHz
Material Type
Silicon
Package Type
TO-92
Polarity
NPN
Power Dissipation
360 mW
Primary Type
Si
Temperature Range, Junction, Operating
-55 to 125 °C
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Base
70 V
Voltage, Breakdown, Collector To Emitter
50 V
Voltage, Breakdown, Emitter To Base
5 V
Voltage, Collector To Base
70 V
Voltage, Collector To Emitter
50 V
Voltage, Collector To Emitter, Saturation
0.125 V
Voltage, Emitter To Base
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Steady State Collector Current (Note 1), I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (T
Static Characteristics
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Derate Above +25 C
Derate Above +25 C
Parameter
EBO
A
A
CBO
Low Noise, High Gain Amplifier
= +25 C), P
= +55 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
Symbol
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
= +25 C unless otherwise specified)
CBO
CES
EBO
T
T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
V
V
V
V
NTE199
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CB
CB
EB
= 5V
= 50V
= 50V, T
= 50V
Test Conditions
A
= +100 C
L
. . . . . . . . . . . . . . . . .
Min
–
–
–
–
Typ
–
–
–
–
–55 to +125 C
–55 to +150 C
Max
30
10
30
50
3.3mW/ C
3.3mW/ C
360mW
260mW
+260 C
100mA
Unit
nA
nA
nA
50V
70V
A
5V
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NTE199 Summary of contents
Page 1
... Low Noise, High Gain Amplifier Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Static Characteristics (Cont’d) Forward Current Transfer Ratio Breakdown Voltage Collector–to–Emitter Breakdown Voltage Collector–to–Base Breakdown Voltage Emitter–to–Base Collector Saturation Voltage Base Saturation Voltage Base Emitter ON Voltage Dynamic Characteristics Forward Current Transfer Ratio Output Capacitance, Common ...