NTE181 NTE Electronics, Inc., NTE181 Datasheet - Page 2

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NTE181

Manufacturer Part Number
NTE181
Description
Transistor; TO-3; NPN; 100; 100; 90 V; 30 A; 200 W; -65 to 200 degC; 0.875 deg
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet

Specifications of NTE181

Complement To
PNP
Current, Collector
30 A
Current, Collector Cutoff
1 mA
Current, Continuous Collector
30 A
Current, Gain
25 to 100
Device Dissipation
200 W
Frequency
2 MHz
Gain, Dc Current, Maximum
100
Gain, Dc Current, Minimum
25 mA
Material Type
Silicon
Package Type
TO-3
Polarity
NPN
Power Dissipation
200 W
Primary Type
Si
Resistance, Thermal, Junction To Case
0.875 °C/W
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
0.8 V
Voltage, Emitter To Base
4 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
ON Characteristics (Note 1)
DC Current Gain
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
.350 (8.89)
10% of each other.
NTE181 (NPN).
Parameter
.215 (5.45)
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
300 s. Duty Cycle
V
CE(sat)
BE(sat)
BE(on)
h
f
FE
T
C
1.187 (30.16)
=+25 C unless otherwise specified)
.875 (22.2)
I
I
I
I
I
Dia Max
C
C
C
C
C
= 7.5A, V
= 7.5A, V
= 7.5A, I
= 7.5A, I
= 1A, V
Collector/Case
(16.9)
Test Conditions
.665
.040 (1.02)
CE
B
B
CE
CE
= 750mA
= 750mA
= 10V, f = 1MHz
.525 (13.35) R Max
2%.
= 2V
= 2V
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Seating
Plane
Min Typ Max Unit
2.0
25
FE
) matched to within
100
1.3
0.8
1.3
MHz
V
V
V

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