4N35 Siliconix / Vishay, 4N35 Datasheet - Page 3

• Manufacturer Part Number: 4N35
• Description: Optoisolator; Analog; 6-Pin DIP; Transistor; 150 mW; 60 mA
• Manufacturer: Siliconix / Vishay
• Type: Analogr

Specifications of 4N35

• Application: AC mains detection, reed relay driving, logic ground isolation
• Channel Type: P-Channel
• Current Transfer Ratio: 100
• Input Type: LED
• Mounting And Package Type: Leaded
• Operating And Storage Temperature: -55 to +100 °C, (Operating) - 55 to +150 °C, (Storage)
• Output Type: Transistor
• Package Type: 6-Pin DIP
• Power Dissipation: 150 mW
• Resistance, Drain To Source On: 10^11 Ohms
• Voltage, Diode Forward: 60 mA
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1)
Output
1)
Coupler
1)
Document Number 83717
Rev. 1.5, 27-Jan-05
Forward voltage
Reverse current
Capacitance
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-base breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance
Resistance, input to output
Capacitance (input-output)
amb
Indicates JEDEC registered value
Indicates JEDEC registered value
Indicates JEDEC registered value
= 25 °C, unless otherwise specified
1)
1)
1)
1)
Parameter
Parameter
Parameter
1)
1)
1)
I
I
V
V
I
I
I
V
V
V
V
100 °C
V
100 °C
V
V
f = 1.0 MHz
F
F
C
E
C
R
R
CE
CE
CE
CE
CE
CE
IO
= 10 mA
= 10 mA, T
= 100 µA
= 1.0 mA
= 100 µA, I
= 6.0 V
= 0, f = 1.0 MHz
= 500 V
= 10 V, I
= 10 V, I
= 60 V, I
= 30 V, I
= 60 V, I
= 0
Test condition
Test condition
Test condition
F
F
F
F
F
amb
B
=0
= 0
= 0
= 0, T
= 0, T
= 1.0 µA
= - 55 °C
amb
amb
=
=
4N35
4N36
4N37
4N38
4N35
4N36
4N37
4N38
4N35
4N36
4N37
4N38
4N35
4N36
4N37
4N38
Part
Symbol
Symbol
R
C
C
4N35/ 4N36/ 4N37/ 4N38
V
V
I
R
IO
IO
O
F
F
Symbol
BV
BV
BV
BV
BV
BV
BV
BV
BV
I
I
I
I
I
I
I
I
C
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
ECO
CBO
CBO
CBO
CBO
CE
10
Min
Min
0.9
11
Min
7.0
30
30
30
80
70
70
70
80
Vishay Semiconductors
Typ.
Typ.
1.3
1.3
0.1
0.5
25
Typ.
5.0
5.0
5.0
6.0
6.0
Max
Max
1.5
1.7
10
Max
500
500
500
50
50
50
50
www.vishay.com
Unit
Unit
µA
pF
pF
Unit
Ω
V
V
nA
nA
nA
nA
µA
µA
µA
µA
pF
V
V
V
V
V
V
V
V
V
3