KMI18/4,115 NXP Semiconductors, KMI18/4,115 Datasheet - Page 4

• Manufacturer Part Number: KMI18/4,115
• Manufacturer: NXP Semiconductors

Specifications of KMI18/4,115

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Philips Semiconductors
CHARACTERISTICS
T
otherwise specified.
2000 Sep 05
Sensor characteristics
d
d
H
H
H
H
H
f
Supply conditions
I
V
Signal output characteristics
I
I
V
t
t
amb
rm
CC
OUT
OUT(high)
rOUT
fOUT
max
min
CC
OUT
yLH
yHL
y0
yh
x
Integrated rotational speed sensor
SYMBOL
= 26
10 C; V
maximum sensing
distance
minimum sensing distance T
repeatability of rotational
angle
magnetic trigger field
strength (threshold) for
LH-output edge
magnetic trigger field
strength (threshold) for
HL-output edge
magnetic offset
magnetic trigger hysteresis
auxiliary magnetic field
strength
frequency of magnetic
reference marks
DC supply current
DC supply voltage
transfer behaviour
power-on state
output current
output leakage current
output saturation voltage
output signal rise time
output signal fall time
CC
= 5 V; f
PARAMETER
rm
= 0 to 25000 Hz; gear wheel according to Fig.4; magnetic reading point Fig.10 unless
T
T
T
T
T
V
T
V
T
change of position of
reference mark
low state; note 1
high state; note 2;
see Fig.7
T
state; note 1
low 10% to high 90%;
see Fig.9
high 90% to low 10%;
see Fig.9
amb
amb
amb
amb
amb
amb
amb
amb
amb
CC
CC
I
I
I
OUT
OUT
OUT
; f
= 5 V
= 5 V
= 40 to +150 C
= 40 to +150 C
= 40 to +150 C
= 40 to +150 C
= 26
= 40 to +150 C;
= 40 to +150 C;
= 40 to 150 C; low
CONDITIONS
rm
= 1 mA
= 10 mA
= 20 mA
; d; = constant
4
10 C;
2.2
100
0
6.5
6
4.5
see Fig.3
undefined
0.1
0.01
0.1
0.3
5
0.05
200
600
200
11
MIN.
2.7
0.01
+300
500
7.5
7
5
0.03
0.2
0.5
12
0.5
300
5.8
TYP.
Objective specification
0.3
0.02
+600
+200
+200
700
25000
8.5
10
16.5
20
100
0.1
0.5
1
20
1
3
MAX.
KMI18/4
mm
mm
deg
A/m
A/m
A/m
A/m
kA/m
Hz
mA
mA
V
mA
V
V
V
A
s
s
UNIT