BAT18 NXP Semiconductors, BAT18 Datasheet - Page 3

• Manufacturer Part Number: BAT18
• Description: Planar high-performance band-switching diode in a small rectangular SOT23 SMD plastic package
• Manufacturer: NXP Semiconductors
• Type: Switchr

Specifications of BAT18

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.2V
• Operating Temperature Classification: Military
• Reverse Voltage: 35V
• Package Type: SOT-23
• Mounting: Surface Mount
• Maximum Series Resistance @ Maximum If: 0.7@5mAOhm
• Operating Temperature (max): 125C
• Pin Count: 3
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
9397 750 13385
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse
(mA)
(1) T
(2) T
(3) T
(pF)
C d
I
F
100
1.5
1.3
1.1
0.9
0.7
0.5
80
60
40
20
0
10
voltage.
f = 1 MHz; T
voltage; typical values.
0.3
j
j
j
-1
= 60 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
j
= 25 C.
0.7
1
(1)
(2)
1.1
10
(3)
V
V
R
F
001aab165
001aab167
(V)
(V)
10
Rev. 02 — 31 August 2004
1.5
2
Fig 2. Reverse current as a function of junction
Fig 4. Diode forward resistance as a function of
(nA)
I
(1) maximum values.
(2) typical values.
R
10
( )
r
10
10
10
10
D
10
1
2
1
0
5
4
3
2
1
V
temperature.
f = 200 MHz; T
forward current; typical values.
1
0
R
= 20 V.
40
j
= 25 C.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
80
10
I
Silicon planar diode
F
120
(mA)
(2)
(1)
T j ( C)
001aab166
001aab168
BAT18
160
10
2
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