K4S511632BUC75 Samsung Semiconductor, K4S511632BUC75 Datasheet
K4S511632BUC75
Specifications of K4S511632BUC75
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K4S511632BUC75 Summary of contents
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... SDRAM 512Mb B-die (x4, x8, x16) 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free * Samsung Electronics reserves the right to change products or specification without notice. (RoHS compliant) Revision 1.1 August 2004 CMOS SDRAM Revision. 1.1 August 2004 ...
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... SDRAM 512Mb B-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (August, 2004) - Corrected typo. CMOS SDRAM Revision. 1.1 August 2004 ...
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... SDRAM 512Mb B-die (x4, x8, x16) 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & ...
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... SDRAM 512Mb B-die (x4, x8, x16) Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 ± 0.10 ± 0.004 0.875 0.008 +0.10 0.30 0.80 -0.05 +0.004 0.0315 0.012 -0.002 54Pin TSOP(II) Package Dimension CMOS SDRAM 0.25 TYP 0.010 +0 ...
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... SDRAM 512Mb B-die (x4, x8, x16) FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR CLK CKE * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 Column Decoder Latency & ...
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... SDRAM 512Mb B-die (x4, x8, x16) PIN CONFIGURATION (Top view) x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 N.C DQ6 DQ3 V V SSQ SSQ DQ7 N LDQM N CAS CAS RAS ...
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... SDRAM 512Mb B-die (x4, x8, x16) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. ...
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... SDRAM 512Mb B-die (x4, x8, x16) DC CHARACTERISTICS (x4) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active) I CC2 Precharge standby current in PS CKE & CLK ≤ V power-down mode I CC2 I CC2 Precharge standby current in non power-down mode I NS CC2 ...
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... SDRAM 512Mb B-die (x4, x8, x16) DC CHARACTERISTICS (x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active) I CC2 Precharge standby current in PS CKE & CLK ≤ V power-down mode I CC2 I CC2 Precharge standby current in non power-down mode I NS CC2 ...
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... SDRAM 512Mb B-die (x4, x8, x16) DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active) I CC2 Precharge standby current in PS CKE & CLK ≤ V power-down mode I CC2 I CC2 Precharge standby current in non power-down mode I NS ...
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... SDRAM 512Mb B-die (x4, x8, x16) AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870Ω (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... SDRAM 512Mb B-die (x4, x8, x16) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width ...
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... SDRAM 512Mb B-die (x4, x8, x16) IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133Mhz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77 ...
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... SDRAM 512Mb B-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15 ...
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... MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. ...