IS43R32800B-6BLI ISSI, Integrated Silicon Solution Inc, IS43R32800B-6BLI Datasheet - Page 24

• Manufacturer Part Number: IS43R32800B-6BLI
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32800B-6BLI

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

IS43R32800B
24
OPERATIONAL DESCRIPTION
BANK ACTIVATE
the bank addresses (BA 0,1). A row is indicated by the row address A0-11. The minimum activation
PRECHARG E
prechargeall command (PRE A, PRE+ A8 =H) is available to deactivate them at the same time. A fter
tRP from the precharge, an AC T c ommand to the same bank can be issued.
interval betweenone bank and the other bank is tRRD .
The DDR SDRAM has four independent banks. E ach bank is activated by the ACT command with
The PRE command deactivates the bank indicated by BA 0,1. When multiple banks are active, the
A0-7 ,9-11
Command
A precharge command can be issued at BL/2 from a read command without data loss.
BA 0,1
/CLK
DQS
CL K
A8
DQ
2 ACT comma nd / tRCmi n
AC T
Xa
Xa
00
Bank Activation and PrechargeAll (BL=8, CL=2)
tRRD
tRCD
AC T
01
Xb
Xb
RE AD
Y
0
00
tRCmin
BL /2
tRAS
Qa0
Qa1
Integrated Silicon Solution, Inc. — www.issi.com
Qa2
Precharge all
Qa3
PR E
1
Qa4
Qa5
tRP
Qa6
Qa7
AC T
Xb
Xb
01
Rev. 00D
03/19/08