CTA2P1N-7-F Diodes Zetex, CTA2P1N-7-F Datasheet

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CTA2P1N-7-F

Manufacturer Part Number
CTA2P1N-7-F
Description
Manufacturer
Diodes Zetex
Datasheet

Specifications of CTA2P1N-7-F

Lead Free Status / Rohs Status
Compliant
Mechanical Data
Features
Maximum Ratings, Total Device
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Notes:
DS30296 Rev. 9 - 2
Combines MMBT4403 type transistor with 2N7002 type
MOSFET
Small Surface Mount Package
NPN/P-Channel Complement Available: CTA2N1P
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 3 and 4)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: A80, See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
1. No purposefully added lead.
2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
http://www.diodes.com/datasheets/ap02001.pdf.
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
GS
Characteristic
≤ 1.0MΩ
Characteristic
Characteristic
(Note 2)
Continuous @ 100°C
Continuous
Continuous
Pulsed
Pulsed
@T
A
(Note 2)
(Note 2)
= 25°C unless otherwise specified
www.diodes.com
Q1
K
Symbol
J
1 of 5
V
V
V
C
E
Q1
Q1
DSS
DGR
GSS
I
D
Symbol
Symbol
T
G
B
j
V
V
V
Q2
Q1
R
, T
P
CBO
CEO
EBO
I
θ JA
C
d
A
H
STG
S
D
Q2
D
Q2
Q2
F
B C
L
@T
@T
A
A
Value
= 25°C unless otherwise specified
-55 to +150
= 25°C unless otherwise specified
115
800
±20
±40
60
60
73
COMPLEX TRANSISTOR ARRAY
Value
Value
-600
150
833
-5.0
-40
-40
M
CTA2P1N
CTA2P1N
All Dimens ons in mm
Dim
M
A
B
C
D
F
H
K
L
α
J
SOT-363
0.10
1.15
2.00
0.65 Nominal
0.30
1.80
0.90
0.25
0.10
Min
Units
© Diodes Incorporated
mA
°C/W
Unit
Unit
mW
V
V
V
i
mA
°C
V
V
V
CTA2P1N
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25

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CTA2P1N-7-F Summary of contents

Page 1

... A Value Unit -40 V -40 V -5.0 V -600 25°C unless otherwise specified A Value Units ±20 V ±40 115 73 mA 800 CTA2P1N © Diodes Incorporated Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° ...

Page 2

... GS D 1.0 ⎯ µ 60V 500 ⎯ ± ±20V ⎯ 2 =-250μ 5.0V 0.05A 3.2 7 Ω 4.4 13 10V 0. 1.0 ⎯ 10V 7. ⎯ ⎯ =10V 0. 25V 1.0MHz 2.0 5 30V 0.2A 150Ω 10V GEN © Diodes Incorporated = 25Ω GEN CTA2P1N ...

Page 3

... Fig. 6 Gain Bandwidth Product vs. Collector Current www.diodes.com I = 10mA 1mA I = 100mA I = 300mA 30mA C 1 0.01 0.1 10 100 I , BASE CURRENT (mA) B Fig. 2 Typical Collector Saturation Region -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 4 Base-Emitter Voltage vs. Collector Current COLLECTOR CURRENT (mA) C © Diodes Incorporated 100 100 CTA2P1N ...

Page 4

... Section 5. Fig. 9 On-Resistance vs. Drain Current (2N7002 10V 200mA 120 145 0 ° Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002 www.diodes.com 5. 10V GS 0.2 0.4 0.6 0 DRAIN CURRENT ( 500mA 50mA GATE TO SOURCE VOLTAGE (V) GS © Diodes Incorporated ° 1.0 18 CTA2P1N ...

Page 5

... I , DRAIN CURRENT (A) D Fig. 12 Typical Transfer Characteristics (2N7002) Ordering Information (Note 6) Device CTA2P1N-7-F Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2004 Code R Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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