NIS6111QPT1 ON Semiconductor, NIS6111QPT1 Datasheet

Motor / Motion / Ignition Controllers & Drivers 24V 30A High Speed

NIS6111QPT1

Manufacturer Part Number
NIS6111QPT1
Description
Motor / Motion / Ignition Controllers & Drivers 24V 30A High Speed
Manufacturer
ON Semiconductor
Datasheet

Specifications of NIS6111QPT1

Mounting Style
SMD/SMT
Package / Case
QFN-32 (PLLP), 9 x 9
Lead Free Status / Rohs Status
Not Compliant
NIS6111
BERStIC (Better Efficiency
Rectifier System)
Ultra Efficient, High Speed Diode
rectifier, designed for low voltage, high current systems, such as
those required for today’s digital circuits. It couples a high speed
integrated circuit with a power MOSFET to create a diode with the
same forward drop characteristics as a MOSFET. It offers increased
efficiency for switching power supplies as well as in ORing diode
applications.
addition of external MOSFETs. It features the highest reverse
recovery speed of any device in the industry.
Features
Applications
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 6
PIN ASSIGNMENT
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Pin
The NIS6111 ORing diode is a high speed, high efficiency, hybrid
It offers a low on resistance that can be further reduced by the
Capacity
Low Forward Drop Improves System Efficiency
Ultra High Speed
Can be used in High Side and Low Side Configurations
24 V Rating
Allows use of External MOSFETs for Extended Current Handling
Pb−Free Package is Available*
Redundant Power Supplies for High−Availability Systems
Static ORing Diodes
Low Voltage, Isolated Outputs
Flyback, Forward Converter, Half Bridge Converters
1
2
3
4
5
Symbol
Cathode Power Output Connected to System
Anode
Reg In
Gate
Bias
Power Input Connected to System
Output of Internal Voltage Regulator provides power for
internal only. No external components required at this pin.
Gate Driver Output for Internal and External
N−Channel MOSFET
Input of Internal Voltage Regulator
Function
1
†For information on tape and reel specifications,
NIS6111QPT1
NIS6111QPT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
1
5
NIS6111= Specific Device Code
A
WL
YY
WW
G
Reg In
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
ORDERING INFORMATION
Cathode
32
Anode
5
PIN CONNECTIONS
http://onsemi.com
Equivalent Circuit
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
1
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç
Ç
Ç
Ç Ç Ç Ç Ç Ç
Ç
Ç
Ç Ç Ç Ç Ç Ç
(Bottom View)
(Pb−Free)
Package
PLLP32
PLLP32
CASE 488AC
4
1
2
Ç
Ç Ç
Ç
Ç Ç
PLLP32
Gate
Publication Order Number:
NTD110N02R
3
4
1500 Tape & Reel
1500 Tape & Reel
1
Ç Ç Ç Ç
Shipping
AWLYYWWG
MARKING
DIAGRAM
NIS6111
NIS6111/D
3

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NIS6111QPT1 Summary of contents

Page 1

... Equivalent Circuit ORDERING INFORMATION Device Package Shipping NIS6111QPT1 PLLP32 1500 Tape & Reel NIS6111QPT1G PLLP32 1500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 2

MAXIMUM RATINGS (T = 25°C, unless otherwise noted.) J Rating Peak Repetitive Reverse Voltage ( Peak Regulator Input (Reg In) Voltage Average Rectified Forward Current Non−repetitive Peak Surge Current Analog Die Thermal Resistance (Min Copper Area) MOSFET ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic SYNCHRONOUS RECTIFIER ON STATE Conduction Mode ON Resistance OFF STATE Reverse Leakage Current ( VDC) R Reverse Leakage Current ( VDC SWITCHING (See Figures 1 and 3) (Note 2) FET Turn−on ...

Page 4

V rev V fwd t sat I max Figure 1. Switching Waveform Figure 3. Synchronous Buck Turn Off Delay −40 − TEMPERATURE (°C) Figure 5. Delay Time ...

Page 5

JA (A) − (A) Heated (M) − (M) Heated 500 1000 1500 Figure 7. Thermal Resistance vs. Copper Area for MOSFET (M) and Analog Die (A) 5.15 V ...

Page 6

Introduction The BERS rectifier offers a new concept in rectification for low voltage, high current outputs. This product combines a high speed integrated circuit with a power MOSFET, to create a device with speeds better than an ultrafast silicon rectifier, ...

Page 7

D THERMAL #1 INDEX AREA Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç 0. TOP VIEW 2X 0. SIDE VIEW Ç Ç ...

Page 8

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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