SP000011325 Infineon Technologies, SP000011325 Datasheet

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SP000011325

Manufacturer Part Number
SP000011325
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of SP000011325

Lead Free Status / Rohs Status
Not Compliant
Smart Lowside Power Switch
Features
Application
General Description
N channel vertical power FET in Smart SIPMOS
nology. Fully protected by embedded protected functions.
Semiconductor Group
Current limitation
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
All kinds of resistive, inductive and capacitive loads in switching or
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
linear applications
R
CC
1
4
CC
IN
ESD
2
NC
protection
Overload
limitation
dv/dt
temperature
protection
limitation
Current
Over-
Page 1
Overvoltage
protection
Short circuit
Short circuit
protection
protection
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
chip on chip tech-
HITFET
Source
Drain
LOAD
3
5
V bb
+
HITFET BTS 949
V
R
I
I
E
D(lim)
D(ISO)
DS
AS
DS(on)
02.12.1998
6000
9.5
60
18
19
M
V
m
A
A
mJ

Related parts for SP000011325

SP000011325 Summary of contents

Page 1

... Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS nology. Fully protected by embedded protected functions. ...

Page 2

Maximum Ratings °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection without R CC Continuous input current 1) V -0.2V 10V IN V < -0.2V or ...

Page 3

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150° Off state drain current -40...+150 °C, V ...

Page 4

... Inverse Diode Inverse diode forward voltage I = 5*19A 300 Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition Semiconductor Group Symbol I D(SCp) I ...

Page 5

Block Diagramm Terms HITFET The ground lead impedance of R should be as low as possible Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are ...

Page 6

Maximum allowable power dissipation P = f(T ) tot c BTS 949 260 W 220 200 180 160 140 120 100 On-state resistance 19A; ...

Page 7

Typ. transfer characteristics =12V; T =25° 160 A 120 100 Typ. output characteristic =25° ...

Page 8

Typ. current limit versus f =25°C D(lim Parameter 250 A 10V 200 175 150 125 100 Transient thermal ...

Page 9

Application examples: Current Sense Features and Status Signals D IN HITFET µ open V cc load thermal V cc shutdown reached triptemperature The accuray of Vcc is at each temperature about 10 % ...

Page 10

Package and ordering code all dimensions in mm Ordering code: Q67060-S6703-A4 Ordering Code: Q67060-S6703-A3 Semiconductor Group Ordering Code: Q67060-S6703-A2 Page 10 BTS 949 02.12.1998 ...

Page 11

Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for ...

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