BTS660PE3180ANT Infineon Technologies, BTS660PE3180ANT Datasheet
BTS660PE3180ANT
Specifications of BTS660PE3180ANT
Related parts for BTS660PE3180ANT
BTS660PE3180ANT Summary of contents
Page 1
... Logic GND 1 ) With additional external diode Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation I Current sense ratio 1 ) chip on chip technology. Providing embedded protective functions. ...
Page 2
... V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Load dump Infineon Technologies AG Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! Output to the load. The pins 1,2,6 and 7 must be shorted with each other ...
Page 3
... K/W with silicone paste) not included! thCH ) 8 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air not subject to production test, specified by design ) about 105°C under these conditions See timing diagram on page 14. 11 Infineon Technologies AG R chip - case : ° 150 ° ...
Page 4
... For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit not subject to production test, specified by design ) see diagram on page 15. When bIN (typ.) the charge pump is not active and See also V in circuit diagram on page 9. ON(CL) Infineon Technologies ° 150 ° (Pins 1,2,6,7 to Tab > out ...
Page 5
... Note that under off-conditions (I transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To reduce the power dissipation at the integrated R on page 9. Infineon Technologies AG Symbol T =-40°C: I ...
Page 6
... ON I saturation, see . IS,lim ) not subject to production test, specified by design recommend the resistance between IN and GND to be less than 0 500 for turn-off. Consider that when the device is switched off (I reaches almost Infineon Technologies AG Symbol A,T =-40° =25° =150° A,T =-40° ...
Page 7
... Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms 4 V bIN PROFET bIS Two or more devices can easily be connected in parallel to increase load current capability. ) Low ohmic short may reduce the output current Power Transistor "OFF", potential defined by external impedance. 23 Infineon Technologies AG Output Current Sense level nominal H I IS, lim < ...
Page 8
... Short circuit detection Fault Condition: V > typ.) and t> t ON(SC) ON (80 ...300 µs). Short circuit Logic detection unit Infineon Technologies AG Current sense status output (typ.), R Z,IS devices are connected in parallel). I driven only by the internal circuit as long you want measure load currents ...
Page 9
... IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R IS Infineon Technologies AG V disconnect with energized inductive bb load + V ...
Page 10
... with an approximate solution for R L · OUT(CL · L Infineon Technologies AG Maximum allowable load inductance for a single switch off j,start = 150° OUT 10000 V + OUT 1000 ON(INV) L [µ Externally adjustable current limit E Load If the device is conducting, the sense current can be used to reduce the short circuit current and allow ...
Page 11
... ON(CL -15 V typ OUT ) Latch except when OUT 0 V only if forced externally). So the device remains latched unless V between turn on and t . d(SC) ) Can be "switched off" by using a diode D 25 Infineon Technologies AG BTS 660P < V after shutdown. In most cases V ON(SC) (see page 8) or leaving open the current sense output. ...
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... Current sense ratio f -40°C j ILIS L k ilis 24000 22000 20000 18000 max 16000 14000 typ 12000 min 10000 8000 Infineon Technologies AG Current sense ratio f(I ILIS L 20000 18000 16000 14000 12000 10000 8000 [A] k ilis L Current sense ratio f(I ILIS L ...
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... V) the device will be ON ON(SC) switched off by internal short circuit detection. Typ. on-state resistance [mOhm 150° 85°C 10 25°C 8 -40° Infineon Technologies AG Typ. input current bIN I [mA] IN 1.6 1.4 1.2 only for t < t d(SC) 1.0 0.8 0.6 0.4 25° static dynamic [V] bb ...
Page 14
... The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching motors and lamps OUT Sense current saturation can occur at very high inrush currents (see I on page 6). IS,lim Infineon Technologies AG Figure 2c: Switching an inductive load dV/dtoff V OUT t off I t slc(IS ...
Page 15
... Figure 4e: Overtemperature Reset if T < Auto Restart V OUT T j Figure 6f: Undervoltage restart of charge pump, overvoltage clamp V OUT V IN dynamic, short 6 Undervoltage not below V bIN( bIN(u) bIN(ucp) Infineon Technologies ON(CL ON(CL) Page 15 Data Sheet BTS660P 2003-Oct-01 ...
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... Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life- support device or system affect the safety or effectiveness of that device or system. Life support devices ...