FSDH0265RL_NL Fairchild Semiconductor, FSDH0265RL_NL Datasheet - Page 12

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FSDH0265RL_NL

Manufacturer Part Number
FSDH0265RL_NL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FSDH0265RL_NL

Power Switch Family
FSDH0265
Power Switch On Resistance
5Ohm
Output Current
1.3A
Number Of Outputs
Single
Mounting
Surface Mount
Supply Current
3mA
Package Type
LSOP
Operating Temperature (min)
-25C
Operating Temperature (max)
85C
Operating Temperature Classification
Commercial
Pin Count
8
Power Dissipation
1.56W
Lead Free Status / Rohs Status
Compliant
FSDH0265RN, FSDM0265RN
6. Burst operation :In order to minimize power dissipation
in standby mode, the FPS
As the load decreases, the feedback voltage decreases. As shown in
figure 10, the device automatically enters burst mode when the
feedback voltage drops below V
tinues but the current limit is set to a fixed limit internally to mini-
mize flux density in the transformer. The fixed current limit is
larger than that defined by Vfb = V
driven down further.
voltage drops below V
stops and the output voltages start to drop at a rate dependent
on the standby current load. This causes the feedback volt-
age to rise. Once it passes
The feedback
mode operation alternately enables and disables switching of
the power Sense FET thereby reducing switching loss in
Standby mode.
12
V
V
V
S W IT C H
BURL
BURH
BURH
voltage then falls and the process repeats. Burst
O F F
Figure 8. Soft Start Function
Figure 9. Circuit for Burst operation
/
Switching continues until
BURL
5 V
TM
(350mV). At
V
I_ o v e r
BURH
BURH
enters burst mode operation.
BURH
(500mV) switching resumes.
(500mV). Switching still con-
and therefore, Vfb is
this point switching
R s e n s e
D R A I N
G N D
the feedback
7. Frequency Modulation : EMI reduction can be accom-
plished by modulating the switching frequency of a switched
power supply. Frequency modulation can reduce EMI by
spreading the energy over a wider frequency range than the
band width measured by the EMI test equipment. The
amount of EMI reduction is directly related to the depth of
the reference frequency. As can be seen in Figure 11, the fre-
quency changes from 65KHz to 69KHz in 4mS for the
FSDM0265RN. Frequency modulation allows the use of a
cost effective inductor instead of an AC input mode choke to
satisfy the requirements of world wide EMI limits.
V
V
BURH
BURL
Figure 11. Frequency Modulation Waveform
D rain to
S ource
D rain to
curren t
S ource
voltage
Figure 10. Circuit for Burst Operation
T urn-on
O scillator
Inte rnal
W aveform
65kH z
V ds
69kH z
67kH z
69kH z
T u rn-off
po int
4kH z

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