GP1S094HCZ0F Sharp Electronics, GP1S094HCZ0F Datasheet - Page 2

• Manufacturer Part Number: GP1S094HCZ0F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S094HCZ0F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3mm
• Slit Width: 0.3mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 150000ns
• Rise Time: 150000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig.1 Forward Current vs. Ambient
Fig.3 Forward Current vs. Forward Voltage
Input
Output
Transfer
characte-
ristics
Electro-optical Characteristics
Temperature
500
200
100
60
50
40
30
20
10
Collector dark current
Collector-emitter saturation voltage
Response time
50
20
10
Forward voltage
Reverse current
Collector current
0
5
2
1
Parameter
25
0
0.5
0
Ambient temperature T
T
a
Forward voltage V
50˚C
75˚C
Rise time
Fall time
1
25
1.5
Symbol
V
50
I
CE(sat)
V
CEO
I
I
t
t
R
C
r
f
F
F
a
2
(V)
(˚C)
75
2.5
25˚C
25˚C
85
0˚C
100
3
I
I
I
F
C
F
10mA, I
100 A, V
5mA, V
R
Conditions
V
I
L
F
V
CE
R
1k
20mA
20V
3V
C
CE
Fig.2 Power Dissipation vs. Ambient
Fig.4 Collector Current vs. Forward Current
CE
40 A
5V
5V,
Temperature
120
100
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
0
25
0
Input side power dissipation and
output side collector power dissipation
Total power dissipation
MIN.
Ambient temperature T
0
40
Forward current I
25
TYP.
1.2
10
50
50
50
F
(mA)
a
(˚C)
MAX.
GP1S094HCZ
400
150
150
100
1.4
0.4
VCE 5V
T
10
75
a
25˚C
85
(T
100
20
a
Unit
nA
V
V
25 C)
A
A
s
s