IRF6218SPBF International Rectifier, IRF6218SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF6218SPBF
• Description: MOSFET, -150V, -150A, D2-PAK
• Manufacturer: International Rectifier

Specifications of IRF6218SPBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -27A
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 0.15ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -5V
• Rohs Compliant: Yes

V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
IRF6218S/LPbF
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
AS
SD
g
gs
gd
rr
(BR)DSS
2
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ù
Parameter
Parameter
Parameter
Ù
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
-150
–––
–––
-3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
-0.17
2210
2220
–––
120
–––
–––
–––
–––
–––
–––
370
170
340
–––
–––
–––
150
860
71
21
32
21
70
35
30
89
Typ.
-250
-100
-110
–––
–––
150
-5.0
100
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
–––
–––
–––
–––
-25
-27
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= -16A
= -16A
= 25°C, I
= 25°C, I
= 3.9Ω
= V
= -120V, V
= -120V, V
= -50V, I
= -120V
= -75V
= -25V
= 0V, I
= -10V, I
= -20V
= 20V
= -10V
= -10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
210
, I
-16
D
f
f
Conditions
D
Conditions
DS
Conditions
S
F
DS
DS
= -250µA
D
D
= -250µA
= -16A, V
= -16A, V
= -16A
= -16A
= 0V to -120V
GS
GS
= -1.0V, ƒ = 1.0MHz
= -120V, ƒ = 1.0MHz
f
= 0V
= 0V, T
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D
f
= -1mA
DD
GS
G
J
= -25V
= 0V
= 150°C
Units
mJ
A
f
S
D