NBXDBA009LN1TAG ON Semiconductor, NBXDBA009LN1TAG Datasheet - Page 3

• Manufacturer Part Number: NBXDBA009LN1TAG
• Description: IC CLOCK OSC LVPECL 3.3V 6-CLCC
• Manufacturer: ON Semiconductor
• Series: PureEdge™r
• Type: Clock Oscillatorr

Specifications of NBXDBA009LN1TAG

• Frequency: 150MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 79mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 6-CLCC
• Count: *
• Product: XO
• Frequency Stability: 50 PPM
• Supply Voltage: 3.3 Volts
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 85 C
• Duty Cycle (max): 52 %
• Mounting Style: SMD/SMT
• Supply Voltage (max): 3.63 Volts
• Supply Voltage (min): 2.97 Volts
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. Measurement taken with outputs terminated with 50 ohm to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Measurement taken with outputs terminated with 50 ohm to V
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
Table 6. DC CHARACTERISTICS
Table 7. AC CHARACTERISTICS
t
DUTY_CYCLE
Symbol
Symbol
f
V
F
CLKOUT
t
t
OE/OD
OUTPP
V
t
t
V
NOISE
jit
I
V
V
jitter
start
I
DD
I
Df
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
t
t
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OH
(F)
IL
OL
R
IH
F
IL
Power Supply Current
OE and FSEL Input HIGH Voltage
OE and FSEL Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Output Voltage Amplitude
Output Clock Frequency
Frequency Stability − NBXDBA009
Phase−Noise Performance
f
(See Figures 3 and 4)
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
CLKout
= 75 MHz/150 MHz
Characteristic
Characteristic
(V
(V
DD
DD
= 3.3 V ± 10%, GND = 0 V, T
= 3.3 V ± 10%, GND = 0 V, T
FSEL
FSEL
OE
OE
http://onsemi.com
Conditions
V
V
DD
DD
DD
DD
Every Year After 1
100 kHz of Carrier
12 kHz to 20 MHz
10 MHz of Carrier
100 Hz of Carrier
10 kHz of Carrier
1 MHz of Carrier
= 3.3 V
= 3.3 V
−2 V. See Figure 5.
1 kHz of Carrier
−2 V. See Figure 5.
10,000 Cycles
10,000 Cycles
FSEL = HIGH
FSEL = LOW
1000 Cycles
1000 Cycles
3
Conditions
(Note 4)
1
st
A
A
Year
= −40°C to +85°C) (Note 2)
= −40°C to +85°C) (Note 3)
GND − 300
V
V
st
DD
DD
2000
−100
−100
−100
−100
2105
1355
Min.
−1945
−1195
Min.
48
Typ.
660
−108/−102
−122/−116
−129/−122
−129/−122
−137/−131
−161/−158
79
Typ.
150
250
250
0.4
2.3
1.3
8.7
75
13
50
1
V
V
DD
DD
Max.
+100
+100
+100
+100
2355
1700
V
100
800
−1600
DD
−945
Max.
±50
200
400
400
0.9
30
20
52
8
4
5
3
1
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
Units
Units
MHz
ppm
ppm
ppm
mA
mV
mV
mV
mV
mV
ms
mA
mA
ps
ps
ps
ps
ps
ns
ps
ps
%