MC10H646FN ON Semiconductor, MC10H646FN Datasheet - Page 3

• Manufacturer Part Number: MC10H646FN
• Description: IC CLOCK DRVR DISTR 1:8 28-PLCC
• Manufacturer: ON Semiconductor
• Type: Fanout Buffer (Distribution)r

Specifications of MC10H646FN

• Number Of Circuits: 1
• Ratio - Input:output: 2:8
• Differential - Input:output: Yes/No
• Input: PECL, TTL
• Output: TTL
• Frequency - Max: 80MHz
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-PLCC
• Frequency-max: 80MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 3. 10H PECL DC CHARACTERISTICS
Symbol
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
1. ECL V
Table 4. 100H PECL DC CHARACTERISTICS
Symbol
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. ECL V
I
I
V
V
V
I
I
V
V
V
INH
IL
INH
IL
IH
IL
BB
IH
IL
BB
INTERNAL TTL GROUND
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
IH
IH
INTERNAL TTL POWER
Input HIGH Current
Input LOW Current
Input HIGH Voltage
Input LOW Voltage
Output Reference
Voltage
Input HIGH Current
Input LOW Current
Input HIGH Voltage
Input LOW Voltage
Output Reference
Voltage
, V
, V
IL
IL
Characteristic
Characteristic
Figure 3. Output Structure
and V
and V
BB
BB
are referenced to V
are referenced to V
V
V
V
V
V
V
CCE
CCE
CCE
CCE
CCE
CCE
IVT = IVO =
IVT = IVO =
IVT = IVO =
IVT = IVO =
IVT = IVO =
IVT = IVO =
Condition
Condition
= 5.0 V (Note 1)
= 5.0 V (Note 1)
= 5.0 V (Note 1)
= 5.0 V (Note 2)
= 5.0 V (Note 2)
= 5.0 V (Note 2)
CCE
CCE
Q0A
OGND0
OVT01
IVT01
IGND01
and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = V
and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = V
(IVT = OVT = V
(IVT = OVT = V
http://onsemi.com
3.835
3.83
3.05
3.62
3.19
3.62
Min
Min
0.5
0.5
3
CCE
0°C
0°C
Typ
CCE
Typ
700
600
500
400
300
200
100
= 5.0 V ± 5%)
0
= 5.0 V ± 5%)
0
3.525
Max
4.16
3.52
3.73
Max
4.12
3.74
255
255
Figure 4. Power versus Frequency (Typical)
P
P
Dynamic
Total
= P
20
3.835
3.87
3.05
3.65
3.19
3.62
Min
Min
0.5
0.5
= C
Static
L
ƒ V
+ P
Power versus Frequency per Bit
25°C
25°C
Typ
Typ
Swing
Dynamic
40
FREQUENCY, MHz
V
CC
3.525
Max
4.19
3.52
3.75
Max
4.12
3.74
175
175
60
3.835
3.94
3.05
3.69
3.19
3.62
Min
Min
0.5
0.5
80
85°C
85°C
Typ
Typ
100
3.555
3.835
3.525
Max
4.28
3.81
Max
3.74
300pF
200pF
100pF
50pF
No Load
175
175
CCE
CCE
= 5.0 V
= 5.0 V
120
Unit
Unit
mA
mA
mA
mA
V
V
V
V
V
V