STM32L151V8T6 STMicroelectronics, STM32L151V8T6 Datasheet - Page 70

• Manufacturer Part Number: STM32L151V8T6
• Description: MCU ARM 64KB FLASH 100LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32L151V8T6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 83
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LFQFP
• Core: ARM Cortex M3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11194

Electrical characteristics
6.3.9
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EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 33.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 17659 Rev 4
33. They are based on the EMS levels and classes
DD
and V
SS
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
3.3 V, LQFP100, T
3.3 V, LQFP100, T
32 MHz
32 MHz
STM32L151xx, STM32L152xx
Conditions
A
A
+25 °C,
+25 °C,
DD
and
Level/
Class
2B
4A