2N2906AJANTX MICROSEMI, 2N2906AJANTX Datasheet - Page 5

• Manufacturer Part Number: 2N2906AJANTX
• Manufacturer: MICROSEMI

Specifications of 2N2906AJANTX

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 40
• Power Dissipation: 400mW
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Not Compliant

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
NOTES:
T4-LDS-0059 Rev. 2 (100247)
Symbol
LL1
LL2
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
BW
CW
BH
BL
CL
.046
.115
.085
.022
.017
Min
Inches
Max
.056
.128
.108
.128
.108
.038
.035
Dimensions
FIGURE 3. Physical dimensions, surface mount (UB version)
Min
1.17
2.92
2.16
0.56
0.43
Millimeters
Max
1.42
3.25
2.74
3.25
2.74
0.96
0.89
UB
Note
TECHNICAL DATA SHEET
Symbol
LS
LS
LW
r
r
r
1
2
1
2
.036
.071
.016
Min
Inches
Max
.040
.079
.024
.008
.012
.022
Dimensions
0.91
1.81
0.41
Min
Millimeters
Max
1.02
2.01
0.61
.203
.305
.559
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Note