2N3439JAN MICROSEMI, 2N3439JAN Datasheet
2N3439JAN
Manufacturer Part Number
2N3439JAN
Description
Manufacturer
MICROSEMI
Datasheet
1.2N3439JAN.pdf
(2 pages)
Specifications of 2N3439JAN
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
350V
Collector-base Voltage(max)
450V
Emitter-base Voltage (max)
7V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
40
Power Dissipation
800mW
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N3439JAN
Manufacturer:
MINI
Quantity:
1 400
DEVICES
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
UA
Operating & Storage Temperature Range
ELECTRICAL CHARACTERISTICS (T
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
R
L = 25mH (min); f = 30 – 60Hz
Collector-Emitter Cutoff Current
V
V
Emitter-Base Cutoff Current
V
Collector-Emitter Cutoff Current
V
V
Collector-Base Cutoff Current
V
V
V
V
C
BB1
CE
CE
EB
CE
CE
CB
CB
CB
CB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
1)
2)
3)
T4-LDS-0022 Rev. 2 (080663)
= 10mAdc
= 300Vdc
= 200Vdc
= 7.0Vdc
= 450Vdc, V
= 300Vdc, V
= 360Vdc
= 250Vdc
= 450Vdc
= 300Vdc
= 470Ω;V
Derate linearly @ 4.57mW/°C for T
Derate linearly @ 28.5mW/°C for T
Derate linearly @ 14mW/°C for T
Parameters / Test Conditions
BB1
BE
BE
= 6V
= -1.5Vdc
= -1.5Vdc
2N3439
2N3439L
2N3439UA
@ T
@ T
@ T
C
SP
A
= +25°C
= +25°C
= +25°C
SP
NPN LOW POWER SILICON TRANSISTOR
C
A
C
> +25°C
A
= +25°C unless otherwise noted)
> +25°C
> +25°C
= +25°C, unless otherwise noted)
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
(2)
(1)
(3)
2N3440
2N3440L
2N3440UA
T
Symbol
Qualified per MIL-PRF-19500/368
op
V
V
V
P
I
CEO
CBO
EBO
, T
C
T
stg
V
Symbol
(BR)CEO
I
I
I
I
CEO
EBO
CEX
CBO
2N3439
TECHNICAL DATA SHEET
350
450
-65 to +200
Min.
350
250
7.0
1.0
0.8
5.0
2.0
2N3440
250
300
Max.
2.0
2.0
5.0
5.0
2.0
2.0
5.0
5.0
10
µAdc
µAdc
µAdc
µAdc
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
°C
W
* See Appendix A for Package
2N3439UA, 2N3440UA
TO-39 * (TO-205AD)
2N3439L, 2N3440L
2N3439, 2N3440
JANTXV
JANTX
LEVELS
JANS
JAN
TO-5 *
Outline
UA
Page 1 of 2
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2N3439JAN Summary of contents
Page 1
... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DEVICES 2N3439 2N3439L 2N3439UA ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ T = +25° +25° +25°C SP Operating & Storage Temperature Range 1) Derate linearly @ 4.57mW/° ...
Page 2
... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (T Parameters / Test Conditions (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 20mAdc 10Vdc 2.0mAdc 10Vdc 0.2mAdc 10Vdc C CE Collector-Emitter Saturation Voltage I = 50mAdc 4.0mAdc C B Base-Emitter Saturation Voltage ...