NE461M02-T1-AZ California Eastern Labs, NE461M02-T1-AZ Datasheet

NE461M02-T1-AZ

Manufacturer Part Number

NE461M02-T1-AZ

Description

Manufacturer

California Eastern Labs

Datasheet

1.NE461M02-T1-AZ.pdf (6 pages)

Specifications of NE461M02-T1-AZ

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

15V

Collector-base Voltage(max)

30V

Emitter-base Voltage (max)

Collector Current (dc) (max)

250mA

Dc Current Gain (min)

Power Dissipation

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

Mini Mold

Collector-base Voltage

30V

Emitter-base Voltage

Lead Free Status / RoHS Status

Compliant

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FEATURES

• HIGH COLLECTOR CURRENT:

• NEW HIGH GAIN POWER MINI-MOLD PACKAGE

• HIGH OUTPUT POWER AT 1 dB COMPRESSION:

• HIGH IP

DESCRIPTION

ELECTRICAL CHARACTERISTICS

NEC's NE461M02 is an NPN silicon epitaxial bipolar transistor

designed for medium power applications requiring high dy-

namic range and low intermodulation distortion. This device

offers excellent performance and reliability at low cost through

NEC's titanium, platinum, gold metallization system and direct

nitride passivation of the surface of the chip. The NE461M02

is an excellent choice for low noise amplifiers in the VHF to UHF

band and is suitable for CATV and other telecommunication

applications.

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Rs = R

SYMBOLS

250 mA MAX

(SOT-89 TYPE)

27 dBm TYP at 1 GHz

37 dBm TYP at 1 GHz

CBO

EBO

21E

FE 2

= 50 Ω, tuned.

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current Gain at V

Insertion Power Gain at V

Noise Figure 1 at V

Noise Figure 2 at V

2nd Order Intermodulation Distortion

Pin = 105 dB µV/75 Ω, f

3rd Order Intermodulation Distortion

Pin = 105 dB µV/75 Ω, f

= 90 MHz, f = f

= 200 MHz, f = 2 x f

= 10 V, I

PARAMETERS AND CONDITIONS

EIAJ

= 50 mA, Rs = R

TRANSISTOR HIGH FREQUENCY

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

- f

LOW DISTORTION AMPLIFIER

= 10 V, I

- f

= 10 V, I

= 190 MHz

= 10 V, I

= 2 V, I

= 20 V, I

= 50 mA, f = 500 MHz

= 50 mA, f = 1 GHz

= 75 Ω

NPN EPITAXIAL SILICON

= 50 mA

= 0

= 50 mA, f = 1 GHz

= 0

= 25°C)

UNITS

µA

OUTLINE DIMENSIONS

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

0.42

±0.06

California Eastern Laboratories

MIN

7.0

BOTTOM VIEW

PACKAGE OUTLINE M02

1.5

4.5±0.1

1.6±0.2

3.0

0.45

±0.06

NE461M02

2SC5337

M02

TYP

0.01

0.03

59.0

82.0

0.42

±0.06

120

8.3

1.5

2.0

(Units in mm)

NE461M02

1.5±0.1

0.25±0.02

MAX

200

5.0

3.5

Related parts for NE461M02-T1-AZ

NE461M02-T1-AZ Summary of contents

Page 1

... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

Page 2

... Collector to Emitter Voltage, V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 30 NE461M02-T1- 3.0 mA 250 W 2.0 150 °C -65 to +150 ° 25°C) A 0.4 mA 0.3 mA 0 GHz 100 QUANTITY PACKAGING 1000 Tape & Reel DC CURRENT GAIN VS ...

Page 3

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN vs. COLLECTOR CURRENT 100 Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT Collector Current, ...

Page 4

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 0 -j10 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 FREQUENCY S 11 GHz MAG ANG 0.100 0.603 -142.0 0.200 0.615 -165.0 0.400 0.618 178.5 0.600 0.616 168.9 0.800 0.612 161.2 1.000 0.607 154.4 1.200 0.602 148.0 1 ...

Page 5

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 3 GHz -j10 22 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 100 FREQUENCY S 11 GHz MAG ANG 0.100 0.596 -144.8 0.200 0.601 -166.5 0.400 0.601 177.5 0.600 0.600 168.1 0.800 0.597 160.4 1.000 0.593 153.6 1.200 ...

Page 6

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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