2N5416JANTX MICROSEMI, 2N5416JANTX Datasheet
2N5416JANTX
Manufacturer Part Number
2N5416JANTX
Description
Manufacturer
MICROSEMI
Datasheet
1.2N5416JANTX.pdf
(2 pages)
Specifications of 2N5416JANTX
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage(max)
350V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
30
Power Dissipation
750mW
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-5
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5416JANTX
Manufacturer:
Microsemi
Quantity:
1 400
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
2N5415
2N5415S
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 4.28 mW/
2) Derate linearly 57.1 mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
Operating & Storage Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
V
V
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
EB
CE
CE
CB
CB
CB
CB
= 150 Vdc
= 200 Vdc
= 250 Vdc
= 300 Vdc
= 6.0 Vdc
= 200 Vdc, V
= 300 Vdc, V
= 175 Vdc
= 280 Vdc
= 200 Vdc
= 350 Vdc
Characteristics
Ratings
BE
BE
= 1.5 Vdc
= 1.5 Vdc
@ T
0
0
Characteristics
C for T
C for T
A
C
= +25
= +25
A
C
> +25
> +25
0
0
C
C
0
0
C
C
Symbol
T
Symbol
V
V
V
op
R
A
2N5416
2N5416S
P
CBO
I
CEO
EBO
,
C
T
= 25
T
JC
stg
2N5415
2N5415
2N5416
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
0
C unless otherwise noted)
2N5415
200
200
-65 to +200
Max.
0.75
17.5
6.0
1.0
10
2N5416
300
350
Symbol
I
I
I
I
I
CBO1
CBO2
CEO
EBO
CEX
Units
0
Unit
TECHNICAL DATA
Vdc
Vdc
Vdc
Adc
C/W
W
W
0
C
Min.
*See appendix A for
package outline
Qualified Level
2N5415S, 2N5416S
Max.
2N5415, 2N5416
500
500
1.0
1.0
50
50
20
50
50
50
50
(TO-205AD)
JANTXV
JANTX
TO-39*
TO- 5*
JAN
Page 1 of 2
mAdc
mAdc
Unit
120101
Adc
Adc
Adc
Adc
Adc
Adc
Adc
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2N5416JANTX Summary of contents
Page 1
PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ +25 C Operating & Storage Temperature Range ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward-Current Transfer Ratio mAdc Vdc 1.0 mAdc Vdc C CE Collector-Emitter Saturation Voltage mAdc 5.0 ...