BCV48E6327XT Infineon Technologies, BCV48E6327XT Datasheet

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PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV29, BCV49 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BCV28 BCV48 Maximum Ratings Parameter Collector-emitter voltage BCV28 BCV48 Collector-base voltage BCV28 ...

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Thermal Resistance Parameter 1) Junction - soldering point 1 For calculation of R thJA please refer to Application Note Thermal Resistance BCV28, BCV48 Symbol Value R 20 thJS 2 Unit K/W 2007-04-20 ...

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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCV28 mA BCV48 C B Collector-base breakdown voltage I = 100 µA, I ...

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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB = 25°C, unless otherwise specified A ...

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DC current gain BCV 28/ 125 ˚ ˚C 5 -55 ˚ Base-emitter ...

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Transition frequency BCV 28/ MHz Total power dissipation P 1200 mW 800 600 400 200 ...

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Package Outline 1) Ejector pin markings possible Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Package SOT89 4.5 ±0.1 B 1.5 45˚ 0.25 ±0.05 0. 1.5 ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...