2N6351JANTX MICROSEMI, 2N6351JANTX Datasheet
2N6351JANTX
Manufacturer Part Number
2N6351JANTX
Description
Manufacturer
MICROSEMI
Datasheet
1.2N6351JANTX.pdf
(2 pages)
Specifications of 2N6351JANTX
Polarity
NPN
Collector-base Voltage(max)
150V
Emitter-base Voltage (max)
12V
Collector-emitter Saturation Voltage
2.5@10mA@5AV
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
TO-33
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N6351JANTX
Manufacturer:
NXP
Quantity:
1 400
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
2N6350
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1)
2)
3)
4)
5)
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Voltage
I
C
Applies for t
Derate linearly @ 5.72 mW/
Derate linearly @ 50 mW/
Derate linearly @ 11.4 mW/
Derate linearly @ 250 mW/
= 25 mAdc, R
p
Characteristics
B1E
10 ms, Duty cycle
Ratings
= 2.2 k , R
2N6351
@ T
Characteristics
0
A
C
C above T
0
0
0
= 100
C above T
= 25
C above T
C above T
B2E
0
C
= 100
0
C
50%
C
C
> 100
A
A
> 100
> 25
> 25
C
2N6352
0
0
C
0
= 25
0
C
C
C
2N6350, 2N6352
2N6351, 2N6353
0
Symbol
Symbol
T
C unless otherwise noted)
V
V
V
R
J
P
,
CBO
I
CER
EBO
I
C
T
B
T
JC
stg
2N6350
2N6352
2N6350
2N6351
2N6350
2N6351
1.0
5.0
80
80
20
-65 to +200
(2)
(3)
2N6353
10
6.0
0.5
5.0
12
(1)
V
Symbol
2N6351
2N6353
2N6352
2N6353
2N6352
2N6353
(BR)
2.0
25
150
150
4.0
CER
TECHNICAL DATA
(5)
(4)
Units
0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
C/W
0
W
W
C
Min.
150
80
2N6350, 2N6351
TO-33*
*See Appendix A for
package outline
TO-24* (TO-213AA)
Qualified Level
2N6352, 2N6353
Max.
JANTXV
JANTX
JAN
Page 1 of 2
Unit
Vdc
120101
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2N6351JANTX Summary of contents
Page 1
NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ 100 C Operating & Storage ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Breakdown Voltage mAdc, Base 1 Open mAdc, Base 2 Open EB Collector-Emitter Cutoff Current V = 2.0 Vdc 100 , V EB1 B2E ...