APTML1002U60R020T3AG MICROSEMI, APTML1002U60R020T3AG Datasheet - Page 2

• Manufacturer Part Number: APTML1002U60R020T3AG
• Manufacturer: MICROSEMI

Specifications of APTML1002U60R020T3AG

• Lead Free Status / RoHS Status: Compliant

Dynamic Characteristics
Shunt Electrical Characteristics
Temperature sensor PTC
Thermal and package characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol
R
Symbol Characteristic
Torque
R
R
V
V
R
T
100
I
I
C
-55
C
C
DS(on)
R
T
Wt
P
GS(th)
R
T
DSS
GSS
I
T
ISOL
STG
thJC
B
sh
oss
iss
rss
sh
sh
sh
/R
C
25
/R
J
25
25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistance value
Tolerance
Load capacity
Current capacity
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Resistance @ 25°C
Resistance ratio
Resistance ratio
Characteristic
Temperature coefficient
All ratings @ T
(per leg)
(per leg)
(per leg)
Test Conditions
V
V
f = 1MHz
j
Test Conditions
V
V
V
V
V
www.microsemi.com
= 25°C unless otherwise specified
GS
DS
DS
DS
GS
GS
GS
= 0V
= 25V
= 1000V ; V
= 800V ; V
= 10V, I
= V
= ±30 V
Tamb=100°C & 25°C
Tamb=-55°C & 25°C
APTML1002U60R020T3AG
DS
, I
D
To heatsink
D
GS
= 2.5mA
= 10A
GS
MOSFET (per leg)
= 0V
= 0V
T
T
T
T
C
C
C
C
T
T
=25°C
=80°C
=25°C
=80°C
j
j
= 125°C
= 25°C
M4
1.676
1980
Min
0.48
Min
Min
4000
Min
Min
-40
-40
-40
2.5
2
1.696
7900
0.49
Typ
6000
Typ
285
Typ
775
Typ
Typ
600
20
2
1.716
2020
Max
0.50
Max
±100
0.24
1000
Max
Max
Max
150
125
100
110
4.7
250
630
20
10
31
22
4
ppm/K
Unit
°C/W
Unit
Unit
Unit
Ω
Unit
N.m
mΩ
mΩ
µA
nA
pF
°C
W
%
V
A
V
g
2 – 3