BA479S-TAP 50 Vishay, BA479S-TAP 50 Datasheet - Page 2

BA479S-TAP 50

Manufacturer Part Number
BA479S-TAP 50
Description
Manufacturer
Vishay
Type
Attenuatorr
Datasheet

Specifications of BA479S-TAP 50

Configuration
Single
Forward Current
50mA
Operating Temperature Classification
Military
Reverse Voltage
30V
Mounting
Through Hole
Operating Temperature (max)
125C
Pin Count
2
Applications Frequency Range
HF/VHF/UHF
Lead Free Status / RoHS Status
Compliant
BA479G, BA479S
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
amb
amb
Figure 2. Differential Forward Resistance vs. Forward Current
95 9734
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 9735
10 000
Figure 1. Forward Current vs. Forward Voltage
0.01
1000
100
Parameter
0.1
100
10
10
1
0.001
1
0
T
amb
= 25 °C
f > 20 MHz
0.4
T
j
0.01
= 25 °C
I
V
F
F
- Forward Current (mA)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
Scattering Limit
0.1
1.2
f = 100 MHz, I
I
F
f = 100 MHz, V
f = 100 MHz, V
= 10 mA, I
Test condition
1
I
V
F
1.6
R
= 20 mA
= 30 V
R
F
2.0
= 10 mA
10
= 1.5 mA
R
R
= 0
= 0
BA479G
BA479S
Part
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
95 9733
Symbol
- 20
- 40
- 60
- 80
C
20
V
I
z
z
DiodesEurope@vishay.com
r
τ
R
0
F
D
f
r
r
f
0
2
, modulated with 200 kHz, m = 100 % (MHz)
Π
- Circuit with 10 dB Attenuation
Min.
20
5
9
f
1
= 100 MHz unmodulated
V
0
= 40 dBmV
40
Typ.
4
Document Number 85527
60
Rev. 1.7, 05-Aug-10
1000
Max.
0.5
50
50
80
Unit
mV
nA
pF
µs
Ω
2

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