BAP50-04W T/R NXP Semiconductors, BAP50-04W T/R Datasheet - Page 2

PIN Diodes TAPE-7 DIO-RFSS

BAP50-04W T/R

Manufacturer Part Number
BAP50-04W T/R
Description
PIN Diodes TAPE-7 DIO-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP50-04W T/R

Configuration
Dual Series
Reverse Voltage
50V
Maximum Series Resistance @ Maximum If
5@10mAOhm
Maximum Series Resistance @ Minimum If
40@0.5mAOhm
Power Dissipation
240mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
1.05us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Forward Continuous Current
50 mA
Carrier Life
1.05 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.5 pF at 5 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Lead Free Status / RoHS Status
Compliant
Other names
BAP50-04W,115
NXP Semiconductors
FEATURES
 Two elements in series configuration in a small SMD
 Low diode capacitance
 Low diode forward resistance.
APPLICATIONS
 General RF applications.
DESCRIPTION
Two planar PIN diodes in series configuration in an
SOT323 small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Jan 29
Per diode
V
I
P
T
T
SYMBOL
F
plastic package
stg
j
R
tot
General purpose PIN diode
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
T
s
= 90 C
2
PINNING
handbook, halfpage
CONDITIONS
Marking code: 6W-.
Fig.1 Simplified outline (SOT323) and symbol.
1
Top view
PIN
1
2
3
3
2
anode
cathode
common connection
65
65
MIN.
1
MAM391
Product specification
DESCRIPTION
BAP50-04W
50
50
240
+150
+150
MAX.
3
V
mA
mW
C
C
2
UNIT

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