HSMP3813TR1 Avago Technologies US Inc., HSMP3813TR1 Datasheet - Page 2

• Manufacturer Part Number: HSMP3813TR1
• Manufacturer: Avago Technologies US Inc.
• Type: Attenuatorr

Specifications of HSMP3813TR1

• Configuration: Dual Common Anode
• Operating Temperature Classification: Military
• Reverse Voltage: 100V
• Package Type: SOT-23
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: VHF/UHF/SHF
• Lead Free Status / RoHS Status: Not Compliant

Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
Electrical Specifications T
Conventional Diodes
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
2
Part
Number
HSMP-
4810
481B
Test Conditions
Symbol
I
P
T
T
T
Part
Number
HSMP-
3810
3812
3813
3814
3815
381B
381C
381E
381F
Test Conditions
f
stg
IV
j
jc
C
= +25°C, where T
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
E0
E2
E3
E4
E5
E0
E2
E3
E4
Package
Marking
Package
Marking
Code
Code
EB
EB
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
0
2
3
4
5
B
C
E
F
Lead
Code
Lead
Code
B
B
C
= +25°C (Each Diode)
[1]
Single
Series
Common Anode
Common Cathode
Reverse Series
Single
Series
Common Anode
Common Cathode
[2]
T
Dual Cathode
Dual Cathode
Configuration
Configuration
C
= +25°C
Unit
Amp
V
°C
°C/W
°C
Breakdown
I
Minimum
Measure
R
Voltage
V
Breakdown
100
V
Measure
I
V
Voltage V
≤ 10μA
R
R
Minimum
100
R
≤ 10uA
BR
= V
= V
(V)
(V)
SOT-23
1
Same as V
150
-65 to 150
500
BR
BR
BR
I
Resistance
F
Maximum
100MHz
= 100mA
0.35
V
f = 1MHz
Capacitance
Series
R
Maximum
R
BR
S
f =
= 50V
3
(Ω)
C
Total
T
(pF)
SOT-323
1
Same as V
150
-65 to 150
150
f = 100MHz
Resistance
I
I
F
F
48 - 70
I
1500
I
f = 100MHz
Series
R
= 1mA,
= 1mA
F
Resistance
F
Minimum
M
= 0.01mA
= 0.01mA,
(Ω)
RH (Ω)
BR
at
Capacitance
f = 1MHz
V
10
I
f = 100MHz
Typical
F
C
R
Resistance
I
Total
Maximum
0.35
F
= 20mA
T
= 50V
= 20mA,
(pF)
R
L
at
(Ω)
Capacitance
Maximum
f = 1MHz
V
3.0
I
f = 100MHz
I
F
Resistance
C
R
Maximum
F
Total
= 100mA
= 100mA,
T
0.4
= 50V
RT (Ω)
(pF)
at
Inductance
500MHz
48 to 70
I
f = 100MHz
F
- 3GHz
Typical
Resistance
L
= 1mA
Total
I
T
F
f =
(nH)
R
1
= 1mA,
M
at
(Ω)