UPC 2763T-E3 Renesas Electronics America, UPC 2763T-E3 Datasheet
UPC 2763T-E3
Manufacturer Part Number
UPC 2763T-E3
Description
Manufacturer
Renesas Electronics America
Datasheet
1.UPC_2763T-E3.pdf
(4 pages)
Specifications of UPC 2763T-E3
Lead Free Status / RoHS Status
Supplier Unconfirmed
ELECTRO-OPTICAL CHARACTERISTICS
• OPTICAL OUTPUT POWER:
• LOW THRESHOLD CURRENT:
• HIGH SPEED:
• SMSR:
• WIDE OPERATING TEMPERATURE RANGE:
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
• BASED ON TELCORDIA RELIABILITY
Notes:
1. Applicable only to NX6301S Series.
2. FAHM: Full Angle at Half Maximum.
3. Tracking Error: γ
FEATURES
SYMBOLS
P
I
t
40 dB
T
ø5.6 mm
TH
r,
SMSR
C
O
∆η
V
P
I
η
λp
θ
t
I
I
C
TH
θ
= -40 to +85°C
OP
t
t
γ
TH
m
D
= 5.0 mW
f
FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
= 13 mA
⊥
r
f
d
||
t
= 0.5 ns MAX
d
Operating Voltage, P
Threshold Current
Threshold Output Power, T
Differential Efficiency
Temperature Dependence
of Differential Efficiency
Peak Emission Wavelength,
P
Side mode Suppression Ratio
P
Vertical Beam Angle
Lateral Beam Angle
Rise Time, 10 to 90%
Fall Time, 90 to 10%
Monitor Current, P
Monitor Dark Current,
Monitor PD Terminal Capacitance, V
Tracking Error
T
O
O
C
= -40 to +85°C
= 5.0 mW, T
= 5.0 mW, T
(mW)
5.0
P
0
O
PARAMETERS AND CONDITIONS
P
NEC's 1310 nm InGaAsP MQW DFB
O
3
C
C
Im = const, (@ P
= -40 to +85°C, RMS (-20 dB)
= -40 to +85°C
O
LASER DIODE IN CAN PACKAGE
PART NUMBER
1
P
1
= 5.0 mW, V
O
, P
,
O
= 5.0 mW, T
= 5.0 mW, FAHM
O
= 5.0 mW, FAHM
C
I
V
V
m
∆
= -40 to +85°C, I
R
R
η
= 5 V
= 5 V, T
d
(mA)
= 10 log
O
R
= 5 V
T
= 5.0 mW, T
C
T
C
R
= -40 to +85°C
C
T
= 25°C
I
m
C
= 5 V, f = 1 MHz
= 85°C
C
= -40 to +85°C
2
= -40 to +85°C
η
η
2
d
d
(@ 25°C)
(@ 85°C)
F
= I
C
γ =
= 25°C)
TH
(T
|
10 log
C
= 25°C, unless otherwise specified)
5.0
P
O
UNITS
|
W/A
deg
deg
mA
mA
µW
nm
µA
[dB]
dB
dB
nA
nA
pF
dB
ns
ns
DESCRIPTION
V
NEC's NX6301 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD. This device is ideal for Synchro-
nous Digital Hierarchy (SDH) and SONET systems, STM-1/
OC-3, STM-4/OC-12 and ITU-T recommendations.
California Eastern Laboratories
1280
0.15
MIN
-3.0
-1.0
200
30
–
–
–
–
–
–
–
–
–
–
–
NX6301 Series
TYP
0.25
0.05
-2.3
600
1.2
0.3
0.1
1.0
13
40
40
30
25
–
–
–
–
NX6301
SERIES
MAX
1335
1000
200
500
1.5
0.5
0.5
1.0
25
50
40
35
50
20
–
–
–
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UPC 2763T-E3 Summary of contents
Page 1
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER 5 • LOW THRESHOLD CURRENT • HIGH SPEED: ...
Page 2
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified) C SYMBOLS PARAMETERS P Optical Output Power f I Forward Current Reverse Voltage Forward Current Reverse Voltage of PD ...
Page 3
TYPICAL PERFORMANCE CURVES FAR FIELD PATTERN (θ//) (NX6301S SERIES ONLY) 100 -60 Lateral Beam Angle θ// (deg.) SPECTRUM -10 -30 -50 -70 -90 1287 1312 Wavelength, λ (nm) Note: The graphs indicate nominal characteristics -40 ...
Page 4
OUTLINE DIMENSIONS (Units in mm) NX6301S SERIES +0.00 ø5.6 -0.03 ø4.2±0.1 ø3.55±0.05 1.0±0.1 +0.1 0.3 -0.0 +0.1 0.3 -0.0 ø1.6±0.1 ø1.0 MIN NX6301SJ LD CHIP REFERENCE 1.2±0.1 PLANE 1.27±0.1 ø0. places) ø2.0 P.C. 1.48 Bolosilicate ...