5962-8867809RX Cypress Semiconductor Corp, 5962-8867809RX Datasheet - Page 11

• Manufacturer Part Number: 5962-8867809RX
• Manufacturer: Cypress Semiconductor Corp

Specifications of 5962-8867809RX

• Lead Free Status / RoHS Status: Not Compliant

DSCC FORM 2234
APR 97
883 including groups A, B, C, and D inspections. The following additional criteria shall apply.
has a wavelength of 2537 angstroms (Ä). The integrated dose (i.e., UV intensity x exposure time) for erasure should be a
minimum of 25 Ws/cm
µW/cm
integrated dose the device can be exposed to without damage is 7258 Ws/cm
device to high intensity UV light for long periods may cause permanent damage.
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-
4.3.1 Group A inspection.
4.3.2 Groups C and D inspections.
4.4 Programming procedures. The programming procedures shall be as specified by the device manufacturer.
4.5 Erasing procedure. The recommended erasure procedure for the device is exposure to shortwave ultraviolet light which
DEFENSE SUPPLY CENTER COLUMBUS
a. Tests shall be as specified in table II herein.
b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c. Subgroup 4 (C
a. End-point electrical parameters shall be as specified in table II herein.
b. Steady-state life test conditions, method 1005 of MIL-STD-883.
(1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level
(2) T
(3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
2
power rating. The device should be placed within one inch of the lamp tubes during erasure. The maximum
changes which may affect input or output capacitance. Sample size is 15 devices with no failures, and all input and
output terminals tested.
COLUMBUS, OHIO 43218-3990
control and shall be made available to the preparing or procuring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1005 of MIL-STD-883.
A
MICROCIRCUIT DRAWING
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
= +125°C, minimum.
Bake, unbiased, for 72 hours at +140°C, for 48 hours at 150°C, or for 8 hours at +200°C, or 2 hours at
300°C for unassembled devices only.
Perform margin test using V
Erase (see 4.5).
Program (at +25°C) a minimum of 50 percent of the total number of cells, including the slowest
programming cell. The remaining cells shall provide a worst case speed pattern..
Perform margin test using V
Perform dynamic burn-in (see 4.2a).
Perform margin test using V
Perform electrical tests (see 4.2b).
Erase (see 4.5). Devices may be submitted for groups A, B, C, and D testing. The maximum storage
temperature shall not exceed 200°C for packaged devices or 300°C for unassembled devices.
2
STANDARD
. The erasure time with this dosage is approximately 35 minutes using an ultraviolet lamp with a 12,000
IN
and C
OUT
measurement) shall be measured only for the initial test and after process or design
m
m
m
= +5.7 V at +25°C using loose timing (i.e.,t
= +5.75 V and V
= +5.7 V at +25°C.
m
+4.40 V at +25°C using loose timing.
SIZE
A
2
(1 week at 12,000 µW/cm
REVISION LEVEL
ACC
B
= 1 µs).
2
). Exposure of the
SHEET
5962-88678
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