TFDU4301-TT3 Vishay, TFDU4301-TT3 Datasheet - Page 4

• Manufacturer Part Number: TFDU4301-TT3
• Manufacturer: Vishay

Specifications of TFDU4301-TT3

• Lead Free Status / RoHS Status: Supplier Unconfirmed

TFDU4301
Vishay Semiconductors
Note
Tested at T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
(1)
www.vishay.com
4
ELECTRICAL CHARACTERISTICS
PARAMETER
TRANSCEIVER
Input voltage low (TXD, SD)
Input voltage high (SD)
Input voltage high (TXD)
Timing logic decision level
Input leakage current low
Input leakage current high
Input capacitance (TXD, SD)
Output voltage low, RXD
Output voltage high, RXD
OPTOELECTRONIC CHARACTERISTICS
PARAMETER
RECEIVER
Minimum irradiance E
angular range
Maximum irradiance E
Angular Range
Maximum no detection
irradiance
Rise time of output signal
Fall time of output signal
RXD pulse width of output signal
Stochastic jitter, leading edge
Standby/shutdown delay,
receiver startup time
Latency
TRANSMITTER
IRED operating current limitation No external resistor for current limitation
Forward voltage of built-in IRED
Output leakage IRED current
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak - emission wavelength
Spectral bandwidth
SD mode becomes active when SD is set high for more than 0.2 µs. In SD mode the detector is disabled and the output disconnected.
amb
(2)
= 25 °C, V
(3)
(4)
e
e
in
CC1
In
[e-mail], [e-mail],
= V
(6)
For technical questions within your region, please contact one of the following:
CC2
= 2.4 V to 5.5 V unless otherwise noted.
For compliance with ISD spec.
C
λ = 850 nm to 900 nm; α = 0°, 15°
After shutdown active or power-on
load
Input irradiance = 100 mW/m
(receiver is inactive as long as
TXD = 0 V, 0 < V
t
Input pulse length > 1.2 µs
Infrared Transceiver Module (SIR, 115.2 kbit/s)
TEST CONDITIONS
po
= 8 pF, I
10 % to 90 %, C
90 % to 10 %, C
no output signal allowed
9.6 kbit/s to 115.2 kbit/s
TXD = low or SD = high
V
V
λ = 850 nm to 900 nm
λ = 850 nm to 900 nm
TXD = high, SD = low
IHi
TEST CONDITIONS
= 1.6 µs at f = 115 kHz,
I
CC1
OH
V
≥ V
ILo
≤ 115.2 kbit/s
= - 200 µA
t
= 5 V, α = 0°, 15°
I
r
α = 0°, 15°
SD = high)
f
, t
CC1
≤ 0.3 V
= 300 mA
OLo
f
< 40 ns,
- 0.3 V
≤ |+ 500 µA|
CC1
L
L
for IrDA
= 8 pF
= 8 pF
(1)
< 5.5 V
2
,
®
SYMBOL
(5)
Applications
V
V
V
V
V
C
I
I
ILo
OLo
IHi
OHi
ILo
IHi
IHi
IN
SYMBOL
t
t
r(RXD)
f(RXD)
I
t
IRED
Δλ
E
E
E
λ
PW
I
V
t
I
I
α
D
L
e
e
p
e
e
e
f
[e-mail]
0.8 x V
V
V
CC1
CC1
MIN.
- 0.3
- 0.3
- 0.5
CC1
MIN.
(0.4)
200
880
1.7
1.4
10
10
- 1
30
4
0.5 x V
TYP.
0.01
0.01
(500)
TYP.
0.01
± 24
300
2.2
1.8
CC1
40
(4)
30
30
50
65
45
5
Document Number: 81965
MAX.
V
0.4
0.4
MAX.
10
10
CC1
0.04
6
6
5
350
500
150
430
370
900
1.9
(8)
80
80
80
3
1
Rev. 1.0, 22-Apr-10
(mW/cm
(µW/cm
(µW/cm
mW/m
mW/m
kW/m
mW/sr
mW/sr
UNIT
UNIT
µA
µA
pF
mA
nm
nm
µA
µs
µs
µs
ns
ns
ns
V
V
V
V
V
V
°
2
2
2
2)
2)
2
)